Researcher innovation and leadership skills are fundamental to create implementable solutions to pressing societal- and market-based global problems. The Research to Innovation to Society
(R2I2S) program is a transformative approach to graduate education, training students at the intersection of research, innovation, and leadership. We detail the design of the program,...
A comparison was made of Al₂O₃ films deposited on Si via prompt inorganic condensation (PIC)
and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing
temperature indicate that the solution-processed PIC films, annealed at 500°C, exhibit lower
leakage and roughly equivalent breakdown strength in comparison to ALD films....
In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the...
BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer...
The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission
measurements and full-potential linearized augmented plane wave band-structure calculations. In
both compounds, the large dispersion near the top of the valence band is realized by admixed states
of Cu 3d and S 3p or Se 4p orbitals,...
p-type conducting films of α- BaCu₂S₂ have been deposited onto glass and KBr substrates, yielding a conductivity of 17 S/cm and a Hall mobility of 3.5 cm²/Vs. For a 430-nm-thick film, the optical transparency approaches 90% in the visible portion of the spectrum at 650 nm, and a transparency of...
Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm² V‾¹ s‾¹ are obtained for devices post-deposition annealed at 300 and 600 °C, respectively. TTFTs processed at 300 and 600 °C yield devices...
We demonstrate color shifting from the yellow to the red in the electroluminescence from (ZnGa)S:Mn films. We observe threshold voltages down to about 35 V, extremely low for such devices. We discuss the materials characteristics of the phosphor films, and the potential for improvement of the luminous intensity of the...
High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x~0.03....
BaCuQF (Q=S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively,...
A unique approach for obtaining bright and efficient saturated green phosphors for alternating-current thin-film electroluminescent (ACTFEL) device applications is presented. The approach involves color-shifting blue SrS:Cu,F ACTFEL phosphors into the green region of the spectrum via the incorporation of alkali metal ions into the SrS lattice. Alkali metals are incorporated...