Two approaches to reduce computational requirements for solving reactive
distillation problems have been studied: simplification of the model using physical
assumptions and numerical approximation using an orthogonal collocation technique.
The results of a full-order model with time dependent stage molar holdups was
compared to published steady-state experimental data and was...
The factors influencing the direct nitridation of silicon, including the effects of the native oxide layer covering the surface of silicon, the effects of hydrogen contained in the nitridation gas and the catalytic effects of metals added to the raw material silicon, were investigated, using a tubular flow reactor and...