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Filtering by: Subject Semiconductor doping Remove constraint Subject: Semiconductor doping Creator Yang, Fanling Hsu Remove constraint Creator: Yang, Fanling Hsu

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  • Electrical properties of GaAs FET structures

    Creator:
    Yang, Fanling Hsu
    Abstract:
    The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is examined at different temperatures and using different voltage ramp rates. The standard FET I-V curve, which can be observed on a commercial curve tracer, is...
    Resource Type:
    Dissertation
    Full Text:
    model based on a more realistic trapezoidal doping profile is derived and simulated. The simulation