The theoretical aspects and fabrication techniques of
a new surface field-effect transistor were investigated.
The new MOS-transistor uses a three-layer structure
similar to those found in bipolar transistors. The new MOS
structure introduces an impurity gradient in the channel
region of the transistor and also makes it possible to reduce...
The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices
made with single-layer aluminum-oxide films and double-layer
films which were made by evaporating aluminum oxide
over thermally-grown silicon dioxide as gate insulation
have been investigated. Vacuum-evaporated aluminum oxide
has features which are suitable for fabricating MOS devices....
This thesis is an experimental study of an acoustic
surface wave delay line using a Lithium Niobate crystal.
A brief theory of operation of the interdigital transducer
with its advantages over the other methods of exciting and
detecting acoustic surface waves is discussed. The experimental
procedure used for evaluation of...
The influence of surface fields on the breakdown voltage
is studied experimentally for p⁺-n silicon diodes with
a junction depth of 0.5μ in order to improve the curvature-
limited breakdown of the diffused, shallow-collector
junction of a microwave transistor.
Devices with a gap in the gate metal electrode are
also...
This paper analyzes the theory and performance of a
Schottky barrier diode detector used over a frequency range
extending from a few kilohertz into the gigahertz region.
The process of large signal rectification is analyzed with
the simplified detector circuit. Phenomena which can
affect the rectification process at high frequencies,...
In this work the use of linear MOS integrated circuits in the
design of a phase-shift oscillator is presented. By multiplying the
capacitors of the RC feedback network through the use of the Miller
effect, large effective capacitance values are obtained which enable
the low frequency operation of the oscillator....
The MOS tetrode transistor is studied in this project.
This device is ideally suited for high frequency and
switching application.
In effect it is the solid state
analogy of a multigrid vacuum tube performing a very useful
multigrid function.
A new structure is developed for
p-channel 10 ohm-cm. silicon substrate...
Problems with Hall devices for instructional use in undergraduate laboratories stimulated this investigation for development of rugged, easily constructed, inexpensive, electrically reproducible Hall devices with high output voltage. Silicon was chosen as the Hall-plate material on the basis of cost and availability. Advantages and disadvantages of various plate shapes, sizes,...