Index Catalog // ScholarsArchive@OSU

Creator:: Streicher, Keone R.
Abstract:: In this report, the optical characteristics of ZnS:Tb AC driven thin-film electroluminescent devices are evaluated. Luminescence at low and room temperature under a constant phosphor field is recorded in order to probe the hot electron energy distribution. Samples fabricated by atomic layer epitaxy and by sputter deposition are investigated and...
Resource Type:: Masters Thesis
Full Text:: probing the hot electron distribution An Abstract of the Thesis of Keone R. Streicher for the degree

Creator:: Hwang, Nam
Resource Type:: Dissertation
Full Text:: projections of hot-carrier effects in CMOS transistors AN ABSTRACT OF THE THESIS OF Nam Hwang for the

Creator:: Or, Siu-shun Burnette
Abstract:: The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
Resource Type:: Masters Thesis
Full Text:: with different drawn gate length 4 Figure 2. A schematic diagram for hot-carrier mechanisms on LDD

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: Hot Carrier Degradation of Sub-Micron n-channel MOSFETs

Creator:: Choo, Andrew Hua-kuang
Resource Type:: Masters Thesis
Full Text:: carrier transport. In reality, these 8 Figure 2.2 Emitter injector structures of hot electron

Creator:: Ge, David Ying
Abstract:: Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and...
Resource Type:: Masters Thesis
Full Text:: complexity. Several hot-electron injection mechanisms have been proposed for hot electron-carrier

ScholarsArchive@OSU