The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
Ferrites have been used for various high frequency applications as bulk
materials. These applications, however, are limited to large dimension devices. In
this thesis, thin film ferrites were deposited from a low temperature solution-based
deposition process that is suitable for micro-scale high frequency applications. The
low temperature nature of this...
A series of seven magnesium-doped copper scandium oxide films were made by radio frequency sputtering, and intercalated at various oxygen pressures to create different oxygen concentrations in each film. The objectives of this study were to verify the p-type nature of these transparent conductive thin films, to determine the correlation...
Epitaxial LaRh₁/₂Mn₁/₂O₃ thin films have been grown on (001)-oriented LaAlO₃ and SrTiO₃ substrates using pulsed laser deposition. The optimized thin film samples are semiconducting and ferromagnetic with a Curie temperature close to 100 K, a coercive field of 1200 Oe, and a saturation magnetization of 1.7μB per formula unit. The...
The use of a permeable membrane to mechanically constrain a film of water with an area of 12 cm² and a thickness of 150 μm in a gas/liquid contactor was investigated. The membrane separated the vapor and liquid phases, and a stiffener
plate made from a gas-permeable material was used...
Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are
investigated as a channel layers for transparent thin-film transistors (TTFTs).
Films are deposited on glass for characterization, and transistor channel layers are
deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass
substrates (ATO/ITO/glass) to produce TTFTs.
UV-visible spectroscopy on...
β-SiC is a semiconductor for high temperature devices, which exhibits several outstanding properties such as high thermal stability, good chemical stability and wide band gap. There is a possibility of fabricating a crack-free ultrathin SiC film on silicon wafers by pyrolysis of polymethylsilane (PMS) film.
This study looks into the...
The digital revolution has brought information to every corner of our daily lives. Inexpensive and flexible integrated circuits are needed for this continuing revolution. Silicon technology, the current workhorse of microelectronic industry, is far from inexpensive and flexible. Researchers are taking several different routes to achieve this goal. Amorphous silicon...
A class of high-performance thin-film transistor (TFT) channel materials has emerged
involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4)
electronic configurations. This thesis is devoted to the pursuit of three topics involving
the development of these materials for TFT applications: modeling TFT currentvoltage
characteristics, an exploratory method for...
This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment.
First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...