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Filtering by: Creator Hose, Sallie Remove constraint Creator: Hose, Sallie Decade 2010-2019 Remove constraint Decade: 2010-2019

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  • Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O

    Creator:
    Austin, Dustin Z., Allman, Derryl, Price, David, Hose, Sallie, Saly, Mark, and Conley, John F., Jr.
    Abstract:
    Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films deposited...
    Resource Type:
    Article
    Full Text:
    , and Sallie Hose ON Semiconductor, Technology Development, Gresham, Oregon 97030 Mark Salyc) SAFC

  • Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

    Creator:
    Austin, Dustin Z.
    Abstract:
    Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have become a core passive component in modern integrated circuits. International Technology Roadmap for Semiconductors (ITRS) projections for scaling of analog/mixed-signal MIMCAP applications require simultaneously increasing capacitance density while maintaining low leakage current density and low voltage nonlinearity (characterized by the quadratic...
    Resource Type:
    Dissertation
    Full Text:
    AUTHORS Derryl Allman, David Price, and Sallie Hose from ON Semiconductor for supplying substrates