Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and
AIGaAs /InGaAs High Electron Mobility Transistors were electrically
characterized in order to compare the room temperature DC device
performance with one-dimensional device models. Model parameters
such as the channel mobility and source/drain series resistances are
extracted from independent measurement of...
During the Oregon State Board of Higher Education's discussion of selective admission authorization, several issues were raised. One of those was a concern about the effect the new admission policies and requirements would have on prospective minority students.
In recent months that concern has been translated into a request for...