The infrared absorption spectra in the out-of-plane
bending (v₂) region of potassium nitrate were studied for
three phases. Several types of sampled were used: nujol
mulls, fused samples, and N¹⁴-N¹⁵ isotopic mixtures. The
existence of three of the reported polymorphic phases was
confirmed by the spectra. The transitions between phase...
An important aspect in device technology is the
processing of GaAs to produce highly-resolved etch
patterns on the substrate. This is done typically on the
GaAs(100) surface. Recently, a number of methods, all
using chlorinated vapor reactants, have been applied to
fabrication of GaAs devices. In spite of these
technological...