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Filtering by: Creator Cann, David P. Remove constraint Creator: Cann, David P. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • Examination of Dielectric Properties of BaTiO3-SrTiO3 Based Systems

    Creator:
    Trobough, Nathaniel D.
    Abstract:
    This thesis examines the dielectric properties of two systems based on the perovskite materials barium titanate and strontium titanate. A solid solution was created starting with these base materials and then adding varying amounts of bismuth-zinc titanate and sodium niobate. These compositions were calcined and sintered at temperatures determined to...
    Resource Type:
    Honors College Thesis
    Full Text:
    :_____________________________________________________ David Cann This thesis examines the dielectric properties of two systems based on the

  • Amorphous metal thin films as a platform for solution processing

    Creator:
    Landau, Nicholas P.
    Abstract:
    The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
    Resource Type:
    Masters Thesis
    Full Text:
    Solution Processing AN ABSTRACT OF THE THESIS OF Nicholas P. Landau for the degree of Master of

  • Fabrication of a flexible glucose sensing catheter for human implantation

    Creator:
    Matthews, David J.
    Abstract:
    Flexible electronics processing techniques were applied to integrate a glucose sensor with a hormone-delivery catheter in order to create a cheap and minimally invasive method for patients with type 1 diabetes to continually monitor and control their blood sugar levels. Ultimately, this work intends to move toward the development of...
    Resource Type:
    Masters Thesis
    Full Text:
    my education, and thanks to Drs. John Wager, David Cann, Julia Jones, and, again, John Conley for

  • Atomic Layer Processing for Next-Generation Microelectronic Materials

    Creator:
    Holden, Konner E. K.
    Abstract:
    Atomic layer deposition (ALD) is an enabling technique for many new micro- and nanoscale technologies. The self-limiting surface chemical reactions by which ALD fundamentally operates give rise to uniquely high precision (atomic) control over deposited film thickness, uniformity over large areas, and conformality over complex and extreme topographies. One such...
    Resource Type:
    Dissertation
    Full Text:
    committee members – Prof. David Cann, Prof. Alan Wang, Prof. John Labram – have all provided key

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    A P-well GaAs MESFET technology AN ABSTRACT OF THE

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation
    Full Text:
    3.4 Hole (p-type) mobility as a function of (a) Fermi level position and (b) gate voltage. The dashed

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    . The MFP for air at room temperature can be approximated by, [5] 1 5.1 × 10−3(cm) M F P = ≈ . (3.1

  • Integration of vapor-solid grown ZnO nanowires through dielectrophoresis

    Creator:
    Ng, Vi-Vie
    Abstract:
    Work on individually constructed devices has demonstrated that nanowires (NWs) offer great promise for applications such as sensing and optoelectronics. Despite this work, reliable large scale alignment and integration of these individual nanostructures into a lithographically defined process remains a challenge. Dielectrophoresis (DEP) is a promising alignment method in which...
    Resource Type:
    Masters Thesis
    Full Text:
    permittivity of the nanowire(medium), and can be written as ε = εp x εo, where εp and εo are the relative

  • Modeling and development of p-type thin-film transistors

    Creator:
    Spiegelberg, Matthew Craig
    Abstract:
    The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
    Resource Type:
    Masters Thesis
    Full Text:
    of p-type thin-film transistors (p-TFTs), moving towards the realization of a fully transparent

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    Drain current transient characterization of P-channel GaAs