Index Catalog // ScholarsArchive@OSU

Ferroelectric thin film development

Creator:: Harman, Taran V.
Abstract:: The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
Resource Type:: Masters Thesis
Full Text:: : Ferroelectric Thin Film Development . Abstract approved: John F. Wager The long-term goal of the research

Growth and characterization of zinc ferrite thin films for high frequency applications

Creator:: Hu, Jiqing
Abstract:: Ferrites have been used for various high frequency applications as bulk materials. These applications, however, are limited to large dimension devices. In this thesis, thin film ferrites were deposited from a low temperature solution-based deposition process that is suitable for micro-scale high frequency applications. The low temperature nature of this...
Resource Type:: Dissertation
Full Text:: limited to large dimension devices. In this thesis, thin film ferrites were deposited from a low

Modeling, Fabrication, and Characterization of Magnetic Thin Films for Integrated Inductor and MRAM Applications

Creator:: Buford, Benjamin
Abstract:: Magnetic thin films have potential to improve devices such as on-chip inductors, and enable new technologies such as magnetic random access memory (MRAM). The use of magnetic cores in on-chip inductors is typically limited to applications well under 1 GHz. At higher frequencies, the performance of the magnetic core is...
Resource Type:: Dissertation
Full Text:: anisotropy to increase the ferromagnetic resonance frequency and thus allow the use of thin-film magnetic

Material development for thin-film transistors

Creator:: Archila, Kevin Alexander
Abstract:: The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
Resource Type:: Masters Thesis
Full Text:: Material Development for Thin-film Transistors AN ABSTRACT

Process development and modeling of thin-film transistors

Creator:: Hong, David
Abstract:: A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
Resource Type:: Masters Thesis
Full Text:: thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal

Contact resistance and stability assessment of oxide-based thin film transistors

Creator:: Hung, Celia M.
Abstract:: This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
Resource Type:: Masters Thesis
Full Text:: . Title: Contact Resistance and Stability Assessment of Oxide-Based Thin Film Transistors Abstract

Modeling and characterization of amorphous oxide semiconductor thin-film transistors

Creator:: Yeh, Bao-Sung
Abstract:: The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
Resource Type:: Dissertation
Full Text:: Thin-Film Transistors AN ABSTRACT OF THE DISSERTATION OF Bao-Sung Yeh for the degree

Comprehensive depletion-mode modeling of oxide thin-film transistors

Creator:: Zhou, Fan
Abstract:: The primary focus of this thesis is modifying the comprehensive depletion-mode model and extending its applicability to p-channel thin-film transistor (TFT) behavior and subthreshold (subpinchoff) operation. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from square-law theory, which can...
Resource Type:: Masters Thesis
Full Text:: Oxide Thin-Film Transistors. Abstract approved

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: characterization, and aging studies of AC thin-film electroluminescent devices AN ABSTRACT OF THESIS OF Ahmad I

Electrical characterization and aging studies of ALE ZnS:Mn ACTFEL devices with varying phosphor thicknesses

Creator:: Shih, Shou-Po
Resource Type:: Masters Thesis
Full Text:: alternating-current thin-film electroluminescent (AC I FEL) devices grown by atomic layer epitaxy (ALE

ScholarsArchive@OSU

Ferroelectric thin film development

Growth and characterization of zinc ferrite thin films for high frequency applications

Modeling, Fabrication, and Characterization of Magnetic Thin Films for Integrated Inductor and MRAM Applications

Material development for thin-film transistors

Process development and modeling of thin-film transistors

Contact resistance and stability assessment of oxide-based thin film transistors

Modeling and characterization of amorphous oxide semiconductor thin-film transistors

Comprehensive depletion-mode modeling of oxide thin-film transistors

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Electrical characterization and aging studies of ALE ZnS:Mn ACTFEL devices with varying phosphor thicknesses

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