Index Catalog // ScholarsArchive@OSU

Random dopants and low-frequency noise reduction in deep-submicron MOSFET technology

Creator:: Miller, Drake A.
Abstract:: The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each...
Resource Type:: Dissertation
Full Text:: : _____________________________________________________ Leonard Forbes The future of mixed-signal, memory, and microprocessor technologies

Low frequency noise and the upconverted phase noise effects in NMOSFET circuits

Creator:: Xie, Dingming
Resource Type:: Masters Thesis
Full Text:: advisor, Dr. Leonard Forbes, for his warm encouragement and competent guidance and untiring help

Ultra low voltage DRAM current sense amplifier with body bias techniques

Creator:: Gang, Yung-jin, 1957-
Abstract:: The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
Resource Type:: Dissertation
Full Text:: : ULTRA LOW VOLTAGE DRAM CURRENT SENSE AMPLIFIER WITH BODY BIAS TECHNIQUES Abstract approved: Leonard

Noise measurements, models and analysis in GaAs MESFETs circuit design

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Dissertation
Full Text:: scientists. In particular, I would like to extend my gratitude to my major advisor, Professor Leonard Forbes

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Creator:: Zhou, Junlin, 1973-
Resource Type:: Masters Thesis
Full Text:: Flicker Noise in p-MOSFET's and Phase Noise Effects on Oscillator Circuits. Abstract approved: Leonard

Physical mechanisms, device models, and lifetime projections of hot-carrier effects in CMOS transistors

Creator:: Hwang, Nam
Resource Type:: Dissertation
Full Text:: my gratitude to my advisor, Dr. Leonard Forbes, who has provided me with generous support, constant

Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

Creator:: Cheng, Mark
Abstract:: This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
Resource Type:: Masters Thesis
Full Text:: Professor Leonard Forbes for guiding my efforts in the right direction and providing a supporting

Ultra low capacitance RFIC probe

Creator:: Jacob, Michael E.
Abstract:: In Radio Frequency Integrated Circuits (RFIC) or high frequency digital ICs, there is a demand to probe the internal nodes for testing. The ultra low capacitance RFIC probe presented in his work is a flexible tool for these applications. The probe utilizes the coupling between a tungsten needle and the...
Resource Type:: Masters Thesis
Full Text:: : ____________________________________________________ Leonard Forbes In Radio Frequency Integrated Circuits (RFIC) or high frequency digital

Timing jitter and phase noise in electronic oscillators

Creator:: Zhang, Chengwei
Abstract:: In the first part of this dissertation, low frequency l/f or flicker noise in the frequency range of Hz to kHz has been identified and demonstrated to be described by temperature fluctuations in heat conduction in bipolar transistors operated at higher power densities. This noise phenomenon is not described by...
Resource Type:: Dissertation
Full Text:: approved: Leonard Forbes In the first part of this dissertation, low frequency l/f or flicker noise in

Comparison and analysis of jitter in CMOS ring oscillators

Creator:: Natesan, Peroly
Abstract:: A comparison and analysis of jitter for five different architectures of ring oscillators using a novel simulation technique developed by Professor Forbes' group is presented. Ring oscillators have become an essential building block in many digital and synchronous communications system due to their integrated nature and are widely used in...
Resource Type:: Masters Thesis
Full Text:: gratitude to my major professor, Dr. Leonard Forbes, for his guidance, support and motivation for

ScholarsArchive@OSU

Random dopants and low-frequency noise reduction in deep-submicron MOSFET technology

Low frequency noise and the upconverted phase noise effects in NMOSFET circuits

Ultra low voltage DRAM current sense amplifier with body bias techniques

Noise measurements, models and analysis in GaAs MESFETs circuit design

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Physical mechanisms, device models, and lifetime projections of hot-carrier effects in CMOS transistors

Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

Ultra low capacitance RFIC probe

Timing jitter and phase noise in electronic oscillators

Comparison and analysis of jitter in CMOS ring oscillators

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