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Filtering by: Creator Saide, P. E. Remove constraint Creator: Saide, P. E. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • p-type transparent electronics

    Creator:
    Valencia, Melinda Marie
    Abstract:
    The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
    Resource Type:
    Masters Thesis
    Full Text:
    , 2003. Title: p-Type Transparent Electronics. Abstract approved: John F. Wager The objective of this

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    Engineering presented on August 2, 1990. Title: A P-Well GaAs MESFET Technology /7l1 e"--A Abstract

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    transitions. The symbol e is an emission rate, c a capture constant, n and p the concentrations of free

  • Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers

    Creator:
    Aminzadeh, Mehran G.
    Abstract:
    The refresh times of all dynamic charge storage devices, best characterized by the generation lifetime at roan temperature and the recombination lifetime at higher device operating temperatures (T>70°C), strongly influence the efficient and successful operation of dynamic charge storage devices such as DRAM's and CCD's. Both recombination and generation lifetime...
    Resource Type:
    Dissertation
    Full Text:
    (Continued) Title Rater e 59 A model for oxide precipitates in n- and p-type silicon wafers, after Hwang et

  • Modeling and development of p-type thin-film transistors

    Creator:
    Spiegelberg, Matthew Craig
    Abstract:
    The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
    Resource Type:
    Masters Thesis
    Full Text:
    . . . . . . . . . . . . . . 14 2.6 Energy band diagram for a metal-semiconductor contact in which E the semiconductor is p

  • Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

    Creator:
    Cheng, Mark
    Abstract:
    This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
    Resource Type:
    Masters Thesis
    Full Text:
    -5827, Nov. 15, 1996. [29] C. Hu, G. P. Li, E. Worley and J. White, "Consideration of low-frequency

  • Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

    Creator:
    Schulte, Donald W.
    Abstract:
    This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    Growth, fabrication and testing of pseudomorphic P

  • SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

    Creator:
    Zhou, Junlin, 1973-
    Resource Type:
    Masters Thesis
    Full Text:
    d o m p h a s e . 1014 U) U) Co 9- Ri' 1015El I-'0< Co I- L 1016 = 0 Ow 0 Cl) 0 1018

  • Design and implementation of configuration modules in a programmable hardware-assisted cache emulator (PHA$E)

    Creator:
    Chalainanont, Nirut
    Abstract:
    Memory hierarchy design is becoming more important as the speed gap be- tween processor and memory continues to grow. Investigations of memory perfor- mance have typically been conducted using trace-driven emulation, which could take tremendous resources (e.g. long emulation time, large storage requirements for traces, and high overall cost). Recent...
    Resource Type:
    Masters Thesis
    Full Text:
    Emulator (PHA$E) . Abstract approved: Alexandre Ferreira Tenca Memory hierarchy design is becoming more

  • A novel unified algorithm and hardware architecture for integrated modular division and multiplication in GF(p) and GF(2[superscript]n) suitable for public-key cryptography

    Creator:
    Tawalbeh, Lo'ai Ali
    Abstract:
    The spread of the internet and communications techniques increases the necessity for security in applications that involves sharing or exchange of secret or private infor- mation. Public-key cryptography is widely used in establishing secure communication channels between the users on the Internet, for E-commerce transactions, and in net- work security...
    Resource Type:
    Dissertation
    Full Text:
    Multiplication in GF (p) and GF (2n) Suitable for Public-Key Cryptography. Abstract approved: Çetin Kaya Koç