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Filtering by: Advisor Caughlan, James C. Remove constraint Advisor: Caughlan, James C. Degree Level Doctoral Remove constraint Degree Level: Doctoral

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  • Circuit characterization for efficient computer analysis

    Creator:
    Magnuson, Waldo George
    Abstract:
    Analysis, coupled with an experimental investigation, is an important step in the design process of electronic circuits. Fortunately, with the development of computer programs to perform general network analysis, the job of analyzing relatively complex networks is not as formidable as it once was. This investigation develops guidelines for efficiently...
    Resource Type:
    Dissertation
    Full Text:
    c o n t a i n s , ( 2 ) t h e n e t w o r k t i m e c o n s t a n t s a n d n e t w

  • Determination of sub-nanogram quantities of boron by diffusion in silicon

    Creator:
    Khanna, Satya Pal
    Abstract:
    A technique was investigated in which a silicon crystal was used as a very sensitive detector of sub-nanogram quantities of boron. The unknown quantity of boron was spread uniformly on the surface of an n-type silicon wafer which was then baked for diffusion. The measured depth of the p-n junction...
    Resource Type:
    Dissertation
    Full Text:
    and assistance during this investigation, particularly Professor James C. Looney of the Electrical

  • Thin-film wideband tunnel-diode amplifier

    Creator:
    Hsieh, Edmund Jui-ching
    Abstract:
    Wideband tunnel-diode amplifiers using common-base transistor stages for isolation were investigated for stability criteria, frequency response, and the effects of temperature and voltage supply fluctuations. For the first time the full frequency spectrum of a tunnel-diode, from d-c to the gigahertz (GHz) range, was able to be utilized in an...
    Resource Type:
    Dissertation
    Full Text:
    - diode, from d -c to the gigahertz (GHz) range, was able to be utilized in an amplifier. Three

  • Properties of flash-evaporated gallium arsenide and gallium phosphide epitaxial films

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    The properties of flash- evaporated films of GaAs and GaP were studied in this investigation. Films were grown at various substrate temperatures, source temperatures, source-to-substrate distances and rates of deposition and were evaluated as to their structural, optical and electric properties. It was found that substrate temperature was the major...
    Resource Type:
    Dissertation
    Full Text:
    of the films. Films deposited below about 250 °C were found to be amorphous. As the substrate

  • Vacuum evaporated dielectrics in MOS structures

    Creator:
    Delzer, Dennis Richard
    Abstract:
    Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also...
    Resource Type:
    Dissertation
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    DIELECTRICS IN MOS STRUCTURES Abstract approved: Redacted for privacy James C. Looney Vacuum evaporated

  • Space-charge-limited currents in silicon using gold contacts

    Creator:
    Ede, Alan Winthrop
    Abstract:
    The theoretical characteristics of space-charge-limited currents in solids are reviewed, and a survey of suitable dielectric materials and experimental space-charge-limited devices is presented. The properties of the gold-silicon contact as used in space-charge-limited devices were experimentally investigated. It was found that the observed characteristics could be explained on the basis...
    Resource Type:
    Dissertation
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    Contacts Redacted for privacy Abstract approved: 1 James C. Looney Major professor The theoretical

  • A MOS-transistor with submicron, and graded channel

    Creator:
    Chou, Pen Chao
    Abstract:
    The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found in bipolar transistors. The new MOS structure introduces an impurity gradient in the channel region of the transistor and also makes it possible to reduce...
    Resource Type:
    Dissertation
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    Cflhmir'rnn- arRdP(1 Channel Redacted for Privacy -..mes C. looney j Abstract approved: The theoretical

  • X-ray and proton induced ultrastructural changes in Chlamydomonas reinhardi, with special reference to the dividing cell

    Creator:
    Gruber, Helen Elizabeth
    Resource Type:
    Dissertation
    Full Text:
    : Redacted for Privacy James C. gaMpton This study focused upon changes in cell ultrastructure in

  • A complementary MOS random-access-memory cell wth double-diffused MOS transistors

    Creator:
    Tao, David Ming-Shih
    Abstract:
    The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors and conventional p-channel MOS transistors on the same chip have been successfully fabricated. Process sequence effects on device threshold voltage and channel length are discussed....
    Resource Type:
    Dissertation
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    Abstract approved: Redacted for privacy 7' James C. Looney r. LJ The use of double-diffused n-type MOS

  • An eraseable MOS read-only memory

    Creator:
    Johnson, Norman Leland
    Abstract:
    A non-volatile electrically alterable read-only memory using an MOS field effect transistor with a threshold voltage which depended upon the position of ionic charges for its memory was fabricated. The conventional silicon dioxide layer was replaced by a composite layer consisting of thermal silicon dioxide, electron beam evaporated aluminum oxide,...
    Resource Type:
    Dissertation
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    for PrivacyAbstract approved: James C. Looney_ A non-volatile electrically alterable read-only memory