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Filtering by: Subject Ferroelectric thin films Remove constraint Subject: Ferroelectric thin films Degree Name Master of Science (M.S.) Remove constraint Degree Name: Master of Science (M.S.)

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  • Ferroelectric thin film development

    Creator:
    Harman, Taran V.
    Abstract:
    The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
    Resource Type:
    Masters Thesis
    Full Text:
    : Ferroelectric Thin Film Development . Abstract approved: John F. Wager The long-term goal of the research

  • Crystallization Rates of AIST and Ge Thin Films by Optical and Electron Microscopy

    Creator:
    Bird, Victoriea L.
    Abstract:
    The amorphous to crystalline phase change is of great interest for the production and operation of phase change memory and germanium electronic devices. Phase change memory relies on the ability to differentiate between differences in optical or electrical properties between the amorphous and crystalline phases of a single material. Amorphous...
    Resource Type:
    Masters Thesis
    Full Text:
    ................................................................................................................................................. 18  2.3.1  Amorphous germanium thin film applications

  • Investigation of the dimensional stability of an ultra-thin film gas/liquid contactor

    Creator:
    Peterson, Jerrod P.
    Abstract:
    The use of a permeable membrane to mechanically constrain a film of water with an area of 12 cm² and a thickness of 150 μm in a gas/liquid contactor was investigated. The membrane separated the vapor and liquid phases, and a stiffener plate made from a gas-permeable material was used...
    Resource Type:
    Masters Thesis
    Full Text:
    the Dimensional Stability of an Ultra-Thin Film Gas/Liquid Cnntacfnr Richard B. Peterson The use of

  • Zinc Tin Oxide Thin Films by Pulsed Laser Deposition for use in Transparent Thin-Film Transistors

    Creator:
    Osborne, James J.
    Abstract:
    Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are investigated as a channel layers for transparent thin-film transistors (TTFTs). Films are deposited on glass for characterization, and transistor channel layers are deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass substrates (ATO/ITO/glass) to produce TTFTs. UV-visible spectroscopy on...
    Resource Type:
    Masters Thesis
    Full Text:
    Laser Deposition for use in Transparent Thin-Film Transistors Abstract approved: Dr. Janet Tate Zinc

  • Material development for thin-film transistors

    Creator:
    Archila, Kevin Alexander
    Abstract:
    The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
    Resource Type:
    Masters Thesis
    Full Text:
    Material Development for Thin-film Transistors AN ABSTRACT

  • Thin film multilayer superconductors and the proximity effect

    Creator:
    McLaughlin, Kevin M.
    Abstract:
    Recent superconducting thin films studies have attempted to create pure metal layer films of Niobium and Titanium with the same properties of superconducting NbTi wire used in industry. These studies have all reported depression of the superconducting properties of the pure metal films which has been attributed to the proximity...
    Resource Type:
    Masters Thesis
    Full Text:
    Thin film multilayer superconductors and the proximity effect

  • A study of ZnS:Mn electroluminescent phosphors grown by halide transport chemical vapor deposition

    Creator:
    Chen, Chia-Jen
    Abstract:
    A low pressure halide transport chemical vapor deposition (HTCVD) system to grow ZnS:Mn electroluminescent phosphors is characterized. Reactor parameters such as gas composition, gas flow rate, and source and substrate temperature are investigated. Crystal structure is investigated using x-ray diffraction, electron spin resonance, and transmission electron microscopy. Chemical characterization includes...
    Resource Type:
    Masters Thesis
    Full Text:
    ) emission. Hexagonal and cubic thin-film ZnS:Mn electroluminescent phosphors are grown by HTCVD

  • Fabrication of ultrathin SiC film using grafted poly(methylsilane)

    Creator:
    Lertwiwattrakul, Wimol
    Abstract:
    β-SiC is a semiconductor for high temperature devices, which exhibits several outstanding properties such as high thermal stability, good chemical stability and wide band gap. There is a possibility of fabricating a crack-free ultrathin SiC film on silicon wafers by pyrolysis of polymethylsilane (PMS) film. This study looks into the...
    Resource Type:
    Masters Thesis
    Full Text:
    the thin SiC film of the new method and spin coated 9 method 2.1 Silylation reaction apparatus

  • Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition

    Creator:
    Voss, Curtis L.
    Abstract:
    The digital revolution has brought information to every corner of our daily lives. Inexpensive and flexible integrated circuits are needed for this continuing revolution. Silicon technology, the current workhorse of microelectronic industry, is far from inexpensive and flexible. Researchers are taking several different routes to achieve this goal. Amorphous silicon...
    Resource Type:
    Masters Thesis
    Full Text:
    Sulfide Thin Film Transistor Using Chemical Bath Deposition. Abstract Approved: Chih-Hung Chang The

  • Process development and modeling of thin-film transistors

    Creator:
    Hong, David
    Abstract:
    A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
    Resource Type:
    Masters Thesis
    Full Text:
    thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal