Index Catalog // ScholarsArchive@OSU

An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy

Creator:: Godbole, Hemendra G.
Abstract:: Imperfections in semiconductor materials constitute a rich area for research. The importance of the characterization of these imperfections cannot be understated. Junction spectroscopic techniques provide a unique tool for the study of these imperfections. The test specimens could consist of Schottky barrier, p-n junctions, or MOS structures. Using Schottky barrier...
Resource Type:: Masters Thesis
Full Text:: ----7 1Profes05/Leonard Forbes/ Redacted for Privacy Imperfections in semiconductor materials

DLTS characterization of precipitation induced microdefects

Creator:: Whitwer, Fredrick D.
Resource Type:: Masters Thesis

Wide bandwidth GaAs MESFET amplifier

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Masters Thesis
Full Text:: would like to express my sincere thanks to my major professor, Prof. Leonard Forbes, for his patient

Hot electron effects in N-channel MOSFET's

Creator:: Or, Siu-shun Burnette
Abstract:: The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
Resource Type:: Masters Thesis
Full Text:: &* Abstract approved: Redacted for Privacy Leonard Forbes The purpose of this work is to develop a new model

Reliability and hot-electron effects in analog and mixed-mode circuits

Creator:: Ge, David Ying
Abstract:: Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and...
Resource Type:: Masters Thesis

Resonant forward-biased guard rings for suppression of substrate noise in mixed-mode CMOS circuits

Creator:: Ficq, Bernard L.
Abstract:: Previous work at Stanford University has demonstrated that inductance in the substrate connection is the principal problem underlying the coupling of digital switching noise into analog circuits. The low impedance substrate can be treated as a single node over a local area. Switching in the digital circuits produces current transients...
Resource Type:: Masters Thesis

Generation of substrate bias and current sources in CMOS technology

Creator:: Zhang, Jing, 1962-
Abstract:: A negatively biased substrate has several advantages over a grounded substrate in CMOS technology. The on-chip generation of this negative substrate bias has made chips easier to use when only a single supply is preferred. This project demonstrates two types of charge pump circuits used to generate negative voltages not...
Resource Type:: Masters Thesis
Full Text:: project. In particular I want to thank: My major professor Leonard Forbes who sparked my interest in

Suppression of substrate noise in a mixed-signal CMOS integrated circuit

Creator:: Lim, Wei Tjan (Richard)
Abstract:: Substrate switching noise is becoming a concern as integrated circuits get larger and speeds get faster. Mixed-mode integrated circuits are especially affected as the substrate noise interferes with sensitive analog circuits resulting in limited signal to noise ratios. This thesis serves to study the cause of the noise at the...
Resource Type:: Masters Thesis
Full Text:: Noise in a Mixed-Signal CMOS Integrated Circuit. Abstract approved: 41111111/"" Leonard Forbes

Low frequency noise and the upconverted phase noise effects in NMOSFET circuits

Creator:: Xie, Dingming
Resource Type:: Masters Thesis
Full Text:: advisor, Dr. Leonard Forbes, for his warm encouragement and competent guidance and untiring help

Experimental verification of a new model for bipolar transistor flicker noise

Creator:: Li, Ling
Abstract:: Previous studies on low frequency flicker noise in bipolar junction transistors (BJT) are reviewed. The original BJT flicker noise sources are mainly attributed to the fluctuation in base surface recombination and the fluctuation in the mobility or diffusivity of free charge carriers. Our experiments were done to verify a newly...
Resource Type:: Masters Thesis
Full Text:: ACKNOWLEDGEMENT I would like to express my deep appreciation to my major profess0r, Dr. Leonard Forbes, for

ScholarsArchive@OSU

An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy

DLTS characterization of precipitation induced microdefects

Wide bandwidth GaAs MESFET amplifier

Hot electron effects in N-channel MOSFET's

Reliability and hot-electron effects in analog and mixed-mode circuits

Resonant forward-biased guard rings for suppression of substrate noise in mixed-mode CMOS circuits

Generation of substrate bias and current sources in CMOS technology

Suppression of substrate noise in a mixed-signal CMOS integrated circuit

Low frequency noise and the upconverted phase noise effects in NMOSFET circuits

Experimental verification of a new model for bipolar transistor flicker noise

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