Index Catalog // ScholarsArchive@OSU

Creator:: Hoffman, R. L., Norris, Benjamin J., and Wager, J. F.
Abstract:: Highly transparent ZnO-based thin-film transistors (TFTs) are fabricated with optical transmission (including substrate) of ~75% in the visible portion of the electromagnetic spectrum. Current–voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ~10⁷. Threshold voltages and channel mobilities of devices...
Resource Type:: Article
Full Text:: 2003 ZnO-based transparent thin-film transistors R. L. Hoffman Hewlett-Packard Company, 1000 NE Circle

Creator:: Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., and Keszler, Douglas A.
Abstract:: Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm² V‾¹ s‾¹ are obtained for devices post-deposition annealed at 300 and 600 °C, respectively. TTFTs processed at 300 and 600 °C yield devices...
Resource Type:: Article
Full Text:: Computer Science, Oregon State University, Corvallis, Oregon 97331-3211 R. L. Hoffman Hewlett-Packard

Creator:: Park, Sangmoon, Keszler, Douglas A., Valencia, Melinda M., Hoffman, Randy L., Bender, Jeffrey P., and Wager, John F.
Abstract:: p-type conducting films of α- BaCu₂S₂ have been deposited onto glass and KBr substrates, yielding a conductivity of 17 S/cm and a Hall mobility of 3.5 cm²/Vs. For a 430-nm-thick film, the optical transparency approaches 90% in the visible portion of the spectrum at 650 nm, and a transparency of...
Resource Type:: Article
Full Text:: . Hoffman, Jeffrey P. Bender, and John F. Wager Department of Electrical and Computer Engineering, Oregon

Creator:: Patterson, Eric A. and Cann, David P.
Abstract:: The piezoelectric fatigue behavior of Pb-free ceramics based on solid solutions of Bi(Zn₀.₅Ti₀.₅)O₃-(Bi₀.5K₀.₅)TiO₃-(Bi₀.₅Na₀.₅)TiO₃ was characterized at 50 kV/cm after 10⁶ bipolar cycles. Ferroelectric compositions containing 2.5% Bi(Zn₀.₅Ti₀.₅)O₃ exhibited only minor losses in maximum strain (~10%). In compositions with 5% Bi(Zn₀.₅Ti₀.₅)O₃ that exhibit large electric field-induced strains, the electromechanical strain actually...
Resource Type:: Article
Full Text:: . Hoffman, and J. Rödel, J. Am. Ceram. Soc. 90(12), 3869–3874 (2007). 22N. Balke, D. C. Lupascu, T

Creator:: Rajachidambaram, M. S., Pandey, A., Vilayurganapathy, S., Nachimuthu, P., Thevuthasan, S., and Herman, G. S.
Abstract:: The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFTs) has been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of...
Resource Type:: Article
Full Text:: , M. Hirano, and H. Hosonon, Nature 432, 488 (2004). 2H. Q. Chiang, J. F. Wager, R. L. Hoffman, J

Creator:: Yanagi, Hiroshi, Tate, Janet, Park, Sangmoon, Park, Cheol-Hee, and Keszler, Douglas A.
Abstract:: BaCuQF (Q=S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively,...
Resource Type:: Article
Full Text:: Physics.@DOI: 10.1063/1.1571224# el a ed o , ls tic t i re e st te t al Q r re y- e- d re k x re th

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