Index Catalog // ScholarsArchive@OSU

Electrical characterization of silicon and silicon dioxide materials

Creator:: Sze, Wing-Il
Abstract:: The major goal of this research work was to develop better electrical measurements for the evaluation of silicon material quality. The first approach investigated was the Zerbst generation lifetime measurement technique. It was demonstrated that the error in the estimation of the generation lifetime obtained with this technique could be...
Resource Type:: Dissertation

An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy

Creator:: Godbole, Hemendra G.
Abstract:: Imperfections in semiconductor materials constitute a rich area for research. The importance of the characterization of these imperfections cannot be understated. Junction spectroscopic techniques provide a unique tool for the study of these imperfections. The test specimens could consist of Schottky barrier, p-n junctions, or MOS structures. Using Schottky barrier...
Resource Type:: Masters Thesis
Full Text:: ----7 1Profes05/Leonard Forbes/ Redacted for Privacy Imperfections in semiconductor materials

Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers

Creator:: Aminzadeh, Mehran G.
Abstract:: The refresh times of all dynamic charge storage devices, best characterized by the generation lifetime at roan temperature and the recombination lifetime at higher device operating temperatures (T>70°C), strongly influence the efficient and successful operation of dynamic charge storage devices such as DRAM's and CCD's. Both recombination and generation lifetime...
Resource Type:: Dissertation

DLTS characterization of precipitation induced microdefects

Creator:: Whitwer, Fredrick D.
Resource Type:: Masters Thesis

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Creator:: Haddad, Homayoon
Resource Type:: Dissertation
Full Text:: approved. Leonard Forbes Material defect characterization has proved to be a valuable tool in today's

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Creator:: Lee, Mankoo
Abstract:: A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
Resource Type:: Dissertation
Full Text:: appreciation to Dr. Leonard Forbes, my major professor, for his helpful academic guidance, research

Wide bandwidth GaAs MESFET amplifier

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Masters Thesis
Full Text:: would like to express my sincere thanks to my major professor, Prof. Leonard Forbes, for his patient

Hot electron effects in N-channel MOSFET's

Creator:: Or, Siu-shun Burnette
Abstract:: The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
Resource Type:: Masters Thesis
Full Text:: &* Abstract approved: Redacted for Privacy Leonard Forbes The purpose of this work is to develop a new model

Reliability and hot-electron effects in analog and mixed-mode circuits

Creator:: Ge, David Ying
Abstract:: Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and...
Resource Type:: Masters Thesis

Physical mechanisms, device models, and lifetime projections of hot-carrier effects in CMOS transistors

Creator:: Hwang, Nam
Resource Type:: Dissertation
Full Text:: my gratitude to my advisor, Dr. Leonard Forbes, who has provided me with generous support, constant

ScholarsArchive@OSU

Electrical characterization of silicon and silicon dioxide materials

An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy

Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers

DLTS characterization of precipitation induced microdefects

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Wide bandwidth GaAs MESFET amplifier

Hot electron effects in N-channel MOSFET's

Reliability and hot-electron effects in analog and mixed-mode circuits

Physical mechanisms, device models, and lifetime projections of hot-carrier effects in CMOS transistors

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