Index Catalog // ScholarsArchive@OSU

Creator:: Johnson, Ronald Lee
Abstract:: The operation of a tunnel-diode delay-line memory cell is examined in some detail, and a digital computer program which approximately simulates the operation of this memory cell is developed. The data from the computer simulation is compared with the available experimental data and found to agree very closely for clock...
Resource Type:: Masters Thesis
Full Text:: Analysis of a tunnel-diode delay-line reflex memory cell

Creator:: Hsieh, Edmund Jui-ching
Abstract:: Wideband tunnel-diode amplifiers using common-base transistor stages for isolation were investigated for stability criteria, frequency response, and the effects of temperature and voltage supply fluctuations. For the first time the full frequency spectrum of a tunnel-diode, from d-c to the gigahertz (GHz) range, was able to be utilized in an...
Resource Type:: Dissertation
Full Text:: Thin-film wideband tunnel-diode amplifier AN ABSTRACT OF

Creator:: Alimardani, Nasir
Abstract:: Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
Resource Type:: Dissertation
Full Text:: function M2) metal electrodes, respectively. Energy band diagrams of the asymmetric tunnel diode under (c

Creator:: Klarr, Tyler D.
Abstract:: As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
Resource Type:: Masters Thesis
Full Text:: faster operation. A thin insulator, approximately 5 - 30 nm, is a necessity for a MIM tunnel diode

Creator:: McGlone, John M.
Abstract:: Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Resource Type:: Masters Thesis
Full Text:: (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their

Creator:: McGlone, John M.
Abstract:: Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
Resource Type:: Dissertation
Full Text:: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 2.3.4 MIM Tunnel Diode Conduction Mechanism . . . . . . . . . . . . . . . . . . . . . . 34 3

Creator:: Cowell, E. William, III
Abstract:: The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored....
Resource Type:: Dissertation
Full Text:: vertical transport metal-insulator-metal (MIM) tunnel diode. s is shown as the electronic transit length

ScholarsArchive@OSU