Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al₂O₃-Ta₂O₅ bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current...
Metal–insulator–metal diodes with Nb₂O₅ and Ta₂O₅ insulators deposited via atomic layer deposition are investigated. For both Nb₂O₅ and Ta₂O₅, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus...
Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS₂ uniformly across 150mm diameter SiO₂/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl5 and H₂S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E¹₂g) and out-of-plane...
A comparison was made of Al₂O₃ films deposited on Si via prompt inorganic condensation (PIC)
and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing
temperature indicate that the solution-processed PIC films, annealed at 500°C, exhibit lower
leakage and roughly equivalent breakdown strength in comparison to ALD films....
Cellulose nanocrystal (CNC) aerogels are coated with thin conformal layers of Al₂O₃ using
atomic layer deposition to form hybrid organic/inorganic nanocomposites. Electron probe
microanalysis and scanning electron microscopy analysis indicated the Al₂O₃ penetrated more
than 1500 μm into the aerogel for extended precursor pulse and exposure/purge times. The
measured profile...
The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >10(4) and long retention times of >10(4)...
The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb2O5, Ta2 O5, ZrO2, HfO2, Al2 O3, and SiO2 amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss...
Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O
at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were
analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution
transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films
deposited...
Marine microbes exhibit highly varied, often non-spherical shapes that have functional significance for essential processes, including nutrient acquisition and sinking rates. There is a surprising absence of data, however, on how cell shape affects grazing, which is crucial for predicting the fate of oceanic carbon. We used synthetic spherical and...