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  • Hot electron effects in N-channel MOSFET's

    Creator:
    Or, Siu-shun Burnette
    Abstract:
    The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
    Resource Type:
    Masters Thesis
    Full Text:
    the lightly doped drain-source (LDD) insulated gate field-effect transistor," IEEE Tran. Electron

  • Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

    Creator:
    Aminzadeh, Payman G.
    Abstract:
    Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
    Resource Type:
    Masters Thesis
    Full Text:
    -semiconductor field-effect transistors (MOSFETs) are the dominant devices used in today's semiconductor

  • MOSFET-only predictive track and hold circuit

    Creator:
    Qiu, Xiangping
    Abstract:
    High-accuracy and high-speed CMOS track-and-hold (T/H) or sample-and-hold (S/H) circuits are an important part of the analog-to-digital interface. The switched-capacitor (SC) circuits usually contain one or more op-amps whose dc offset, finite gain, finite bandwidth have a big impact on the accuracy of the track-and-hold circuit. Basic correlated double sampling...
    Resource Type:
    Masters Thesis
    Full Text:
    semiconductor charge per unit area, and Cox is the oxide capacitance per unit area. From the above, the small

  • CMOS low noise amplifier design utilizing monolithic transformers

    Creator:
    Zhou, Jianjun J.
    Abstract:
    Full integration of CMOS low noise amplifiers (LNA) presents a challenge for low cost CMOS receiver systems. A critical problem faced in the design of an RF CMOS LNA is the inaccurate high-frequency noise model of the MOSFET implemented in circuit simulators such as SPICE. Silicon-based monolithic inductors are another...
    Resource Type:
    Dissertation
    Full Text:
    is low and the gate oxide thickness is small [21]. When the bulk effect can be completely ignored

  • Reliability and hot-electron effects in analog and mixed-mode circuits

    Creator:
    Ge, David Ying
    Abstract:
    Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and...
    Resource Type:
    Masters Thesis
    Full Text:
    of the liim n-substrate metal-oxide semiconductor field effect transistor, MOSFET, in analog and

  • Ultra low voltage DRAM current sense amplifier with body bias techniques

    Creator:
    Gang, Yung-jin, 1957-
    Abstract:
    The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
    Resource Type:
    Dissertation
    Full Text:
    . Along the y-axis, the box contains two one-half field oxide features and one active area feature

  • A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

    Creator:
    Prasad, S. Jayasimha
    Resource Type:
    Dissertation
    Full Text:
    the GaAs MESFET (Metal-Semiconductor Field Effect 2 Transistor) technology has evolved in recent

  • Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

    Creator:
    Lam, Steven C. F.
    Abstract:
    The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
    Resource Type:
    Masters Thesis
    Full Text:
    motion within a semiconductor crystal. For a long channel device, low field mobility serves as the

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    OF P-CHANNEL GaAs MESFET 1. INTRODUCTION The metal-semiconductor field-effect transistor (MESFET

  • Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

    Creator:
    Or, Pee-Keong
    Abstract:
    The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
    Resource Type:
    Masters Thesis
    Full Text:
    ]. The inherent high electron mobility makes GaAs Metal Semiconductor Field Effect Transistors (MESFETs