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Filtering by: Committee Member Van Vechten, James Remove constraint Committee Member: Van Vechten, James Subject Gallium arsenide semiconductors Remove constraint Subject: Gallium arsenide semiconductors

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  • Analysis and modeling of GaAs MESFET's for linear integrated circuit design

    Creator:
    Lee, Mankoo
    Abstract:
    A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
    Resource Type:
    Dissertation
    Full Text:
    Ph.D. Committee: Dr. James A. Van Vechten, Dr. Thomas K. Plant, Dr. Toshimi Minoura, and, especially