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Filtering by: Subject Gallium arsenide semiconductors -- Design and construction

Device characterization and analog circuit design for heterojunction FETs

Creator:

Wang, Binan

Abstract:

Present day data processing technology requires very high speed signal processing and data conversion rates. Traditionally, these circuits have been implemented in silicon MOS technology, whose high speed performance is limited, due to inherent material properties. Though relatively immature compared to silicon technology, GaAs integrated circuit technology appears to be...

Resource Type:

Masters Thesis
Characterization and applications of low-temperature-grown MBE gallium arsenides

Creator:

Zhao, Pin

Resource Type:

Masters Thesis