Radiation studies were performed on compound semiconductor heterostructure devices. The objective was to understand the degradation processes caused by the exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation phenomenon in single heterojunctions and single quantum wells. It was found that ionizing radiation like gamma...
The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated...
Increased interest in the field of sensor technology stems from the availability of an inexpensive and robust sensor to detect and quantify the presence of a specific gas. Bulk p-CuO/n-ZnO heterocontact based gas sensors have been shown to exhibit the necessary sensitivity and selectivity characteristics, however, low interfacial CuO/ZnO contact...
Since bulk p-CuO/n-ZnO heterocontacts were first proposed for gas detection, rapid development has taken place in improving the overall functionality of these structures. While bulk heterocontacts have been shown to exhibit desirable sensitivity and selectivity characteristics, these devices suffer from innate diffusion and ZnO/CuO connectivity drawbacks that limit their effective...