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  • Hot electron effects in N-channel MOSFET's

    Creator:
    Or, Siu-shun Burnette
    Abstract:
    The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
    Resource Type:
    Masters Thesis
    Full Text:
    with different drawn gate length 4 Figure 2. A schematic diagram for hot-carrier mechanisms on LDD

  • Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

    Creator:
    Aminzadeh, Payman G.
    Abstract:
    Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
    Resource Type:
    Masters Thesis
    Full Text:
    Hot Carrier Degradation of Sub-Micron n-channel MOSFETs

  • Reliability and hot-electron effects in analog and mixed-mode circuits

    Creator:
    Ge, David Ying
    Abstract:
    Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and...
    Resource Type:
    Masters Thesis
    Full Text:
    complexity. Several hot-electron injection mechanisms have been proposed for hot­ electron-carrier