Metal oxide clusters are promising inorganic photoresists in next generation nanomanufacturing because of their potential for high-resolution and low line-edge roughness patterning, and exceptional sensitivity to extreme ultraviolet (EUV) radiation. In EUV patterning, absorption of EUV radiation leads to electron emission that serve as a primary species for driving radiation...
The solution chemistry and kinetic behavior of hafnium peroxy sulfate solutions ("HafSOx") is described in terms of peroxide content and solution speciation. Additionally, thin film behavior, including thermal behavior and solubility, is characterized, and a mechanism of patterning is presented, as well as parameters that should be considered when looking...
The chemistry of hafnium oxide based and materials are described in the context of ion exchange and lithography. HafSOx, represented by the composition HfO₂₋[subscript x](SO₄)x, is described to possess a significant capacity towards ion exchange in acidic and basic solutions, enabling films of HafSOx to be cleanly and readily be...
Patterning of metal oxides typically involves a multi step process, involving
depositing a resist, patterning that resist with some form of lithography, etching the
oxide through the resist, and finally removing. This process can be simplified if the
resist is removed and replaced with a metal oxide that can be...