This thesis presents a limited investigation of the effects
of various etches on the surface properties of silicon. Surface
recombination velocities of silicon under different etching treatments
are compared by using the photoelectromagnetic effect. A
measure of the minority carriers lifetime by the photoconductive
decay method provides another means of...
This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the rise, storage, and fall times at a single operating point where the transistor beta, cutoff frequency and collector capacitance are known. The second set of...
This paper presents an investigation of the power needs and
impedance-matching techniques involved when heating small charges of
relatively high-resistivity semiconductor materials. Topics of discussion
also include a brief section on the theoretical basis for
zone refining, relative merits of resistance and induction heating,
travel mechanism requirements, and work coil...
Application of automatic production techniques to the fabrication
of semiconductor devices has been somewhat limited by the requirements
of conventional alloying techniques. These alloying techniques
require an excessive amount of individual handling.
This thesis investigates the feasibility of applying percussive
welding to the fabrication of metal-semiconductor contacts, as a
solution...
In this paper, the theory of metal-semiconductor contacts was
applied to metal contacts on gallium arsenide. A model was discussed
which proposed that the contact resistance was due to a highly
resistive region between the metal and the semiconductor. In order
to evaluate this resistance, a technique using a VHF...
Electrical resistivity and thermoelectric power measurements
have been made over the temperature range of 450° to 600°C on
n-type liquid thalliurn-tellurium solutions. Liquids with compositions
from 61.5 to 72.0 atomic percent thallium were studied. In addition,
alloys of some of the three component thallium-teIlurium solutions
containing small amounts of silver,...
This paper is a study of the design of an integrated MOS addressing
circuit by using the modified two-phase dynamic shift register. This modified circuit is compared to the conventional two-phase
dynamic SR and discussed briefly. The resulting circuit shows
several advantages to improve the essential conditions of integrated
circuit...
A non-volatile electrically alterable read-only memory using
an MOS field effect transistor with a threshold voltage which depended
upon the position of ionic charges for its memory was fabricated.
The conventional silicon dioxide layer was replaced by a composite
layer consisting of thermal silicon dioxide, electron beam
evaporated aluminum oxide,...
The electrical and optical properties of semi-insulating, epitaxial and ion-implanted GaAs and InP have been characterized and analyzed. Electron and hole traps in semi-insulating GaAs and InP, with activation energies ΔE[subscript T] ranging from 0.16 ± 0.01 to 0.98 ± 0.01 eV, have been detected and characterized by Photo-Induced Current...