The force, temperature, and time relationships were
investigated by using oscilloscope measurement techniques. Force was measured using a strain gage and the dynamic
response recorded with a polaroid oscilloscope camera.
Temperature was measured with a tungsten-rhenium thermocouple
and recorded in the same manner. Residual stress
measurements were made to determine...
Changes in the diode characteristics of three different
types of diodes were studied. These were point-contact, bonded and zinc-diffused diodes. The parameters
in which measurable changes were observed were the forward
resistance, the reverse breakdown voltage, the
forward "knee" of the diode curve and the constant of
proportionality relating the...
Analysis, coupled with an experimental investigation, is an important step in the design process of
electronic circuits. Fortunately, with the development
of computer programs to perform general network analysis,
the job of analyzing relatively complex networks is not
as formidable as it once was. This investigation develops guidelines for efficiently...
The
experimental
procedure
for
evaporating
silicon
monoxide
together
with
the
methods
for
measuring
the film
thickness
have
been
investigated.
The
effects
of
various
process
parameters
on
the
rate
of
deposition,
such
as
source
temperature
and
source-substrate
distance,
have
been
studied.
The
uniformity
of
silicon
monoxide
films
deposited
by
this
particular...
This paper is concerned with the determination of
gallium arsenide resistivity by measurement of attenuation of microwave energy at 7500 megacycles transmitted
through a slice.
The first section of this paper describes gallium
arsenide properties as compared to silicon, germanium,
silicon carbide, and diamond. A description is then
given of...
A technique was investigated in which a silicon crystal was
used as a very sensitive detector of sub-nanogram quantities of
boron. The unknown quantity of boron was spread uniformly on
the surface of an n-type silicon wafer which was then baked for
diffusion. The measured depth of the p-n junction...
Wideband tunnel-diode amplifiers using common-base
transistor stages for isolation were investigated for
stability criteria, frequency response, and the effects
of temperature and voltage supply fluctuations. For the
first time the full frequency spectrum of a tunnel-diode,
from d-c to the gigahertz (GHz) range, was able to be
utilized in an...
This paper describes a technique for separating the
two signal voltages which are necessary for balancing an
ac impedance bridge from its detector output voltage.
The technique is unique in that the necessary information
is derived from modulations on the generator voltage.
These modulations are formed by perturbing the variable...
The properties of flash- evaporated films of GaAs
and GaP were studied in this investigation. Films were
grown at various substrate temperatures, source temperatures,
source-to-substrate distances and rates of deposition
and were evaluated as to their structural,
optical and electric properties.
It was found that substrate temperature was the
major...
This thesis investigates a way to fabricate P-N junctions by
percussive welding. The theoretical basis of percussive welding, design
considerations of the apparatus used, and the electrical characteristics
of the junctions were the main objectives of this investigation.
P-type silicon wafers and gold wire doped with arsenic as a
N-type...