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  • Deposition and Characterization of Pb(Zr₁₋ₓTiₓ)O₃ Thin Films on IGZO and ZTO Substrates for Microelectromechanical Systems

    Creator:
    Maack, Bryan A.
    Abstract:
    Pb(Zr₁₋ₓTiₓ)O₃ (PZT) is a common piezoelectric and ferroelectric thin film material with a wide variety of applications, including ferroelectric random access memories, novel thin film transistors, and microelectromechanical systems (MEMS). The most common substrate for PZT in all of these areas has been platinum-coated silicon. Alternative substrates are desired for...
    Resource Type:
    Honors College Thesis
    Full Text:
    . Title: Deposition and Characterization of Pb(Zr1- xTix)O3 Thin Films on IGZO and ZTO Substrates for

  • Synthesis and characterization of Pb(Zr,Ti)O₃ thin films for microelectromechanical systems

    Creator:
    Brookshire, Kirsten L.
    Abstract:
    Pb(Zr,Ti)O₃ (PZT) is a very attractive material for use in piezoelectric-based microelectromechanical systems (MEMS) due to its high piezoelectric coefficients and ability for large displacements with relatively low applied fields (as compared to electrostatic-based MEMS). The piezoelectric effect is strongly anisotropic, thus it is very desirable to control the crystallographic...
    Resource Type:
    Masters Thesis
    Full Text:
    .................................................................. 75
 Synthesis and Characterization of Pb(Zr,Ti)O3 Thin Films for Microelectromechanical

  • Sputtered Pb(Zr0.52Ti0.48)O3 (PZT) thin films on copper foil substrates, Sputtered Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) thin films on copper foil substrates

    Creator:
    Walenza-Slabe, Joel
    Abstract:
    Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) thin films are of interest for their large dielectric permittivity, ferroelectric, and piezoelectric properties. The material has been widely studied for use in high frequency transducers, multi-layered capacitors, and ferroelectric random access memory. Copper foils are an inexpensive, flexible substrate with a low resistivity which makes them ideal...
    Resource Type:
    Masters Thesis
    Full Text:
    )O3 (PZT) thin films are of interest for their large dielectric permittivity, ferroelectric, and

  • Development of perovskite thin films for use in piezoelectric based microelectromechanical systems

    Creator:
    Shelton, Christopher T.
    Abstract:
    The lead-zirconate-titanate (PZT) solid solution system is currently the workhorse of piezoelectric-based microelectromechanical systems (MEMS) research. Among bulk materials it is known to be one of the strongest piezoelectrics, with extremely high piezoelectric coefficients and electro-mechanical coupling factors. Reproducing these exceptional qualities in thin film form, however, requires precise tuning...
    Resource Type:
    Masters Thesis
    Full Text:
    .............................................................................................115 6.4 Phi scans (101) and rocking curves (001) for PZT thin films on LNO substrates (a) and (c

  • Studies of Structurally Complex Thin Film Oxides for Electronic Materials

    Creator:
    Fast, Dylan Braucht
    Abstract:
    In this dissertation, the structure and electronic properties of multiple metal oxide thin films are characterized and presented. Prompt inorganic condensation (PIC) of metal-oxo and –hydroxo clusters was evaluated as a technique for making metal oxide clusters in two separate studies. The first focuses on the synthesis of lithium niobate...
    Resource Type:
    Dissertation
    Full Text:
    of IGZO thin films. John Wager and Douglas Keszler provided valuable advice for the project in

  • Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications

    Creator:
    Rajachidambaram, Jaana Saranya
    Abstract:
    Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter...
    Resource Type:
    Masters Thesis
    Full Text:
    Engineering presented on December 21, 2011 Title: Evaluation of Amorphous Oxide Semiconductors for Thin Film

  • Nontraditional amorphous oxide semiconductor thin-film transistor fabrication

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
    Resource Type:
    Dissertation
    Full Text:
    of contact angles for distilled water on silicon dioxide substrates with/without AMD cleaning and as

  • Development of bi-based lead-free piezoelectric materials : thin film piezoelectric materials via PVD and CSD routes

    Creator:
    Jeon, Yu Hong
    Abstract:
    Piezoelectric materials have been widely used in electromechanical actuators, sensors, and ultrasonic transducers. Among these materials, lead zirconate titanate Pb(Zr[subscript 1‐x]Ti[subscript x])O₃ (PZT) has been primarily investigated due to its excellent piezoelectric properties. However, environmental concerns due to the toxicity of PbO have led to investigations into alternative materials systems....
    Resource Type:
    Dissertation
    Full Text:
    
 microcantilever
utilizing
Pb(Zr­0.52/Ti­0.48)O­3
thin
film
and
LaNiO3
oxide
 electrode.
Japanese
Journal
of

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    and Greg arranged for the deposition of PECVD SiO2 on very short notice at their respective

  • Impact of Process Optimization and Composition on Thin Film BNKT Microstructure, Ferroelectric and Piezoelectric Response

    Creator:
    Grove, Kyle M.
    Abstract:
    Recent changes in legislation restricting lead content in waste streams produced during electronics manufacturing have inspired a strong push to develop alternative lead-free materials systems for piezoelectric applications. One lead-free piezoelectric material system, (100-X)Bi₀.₅Na₀.₅TiO₃-XBi₀.₅K₀.₅TiO₃ (BNKT), has shown promising properties in bulk research, however, difficulties have arisen in the development of...
    Resource Type:
    Masters Thesis
    Full Text:
    on optimization of a chemical solution deposition process for BNT-BKT thin films as well as