This research work focuses on the mechanism of 1/f noise in GaAs
resistors on semi-insulating substrates and 1/f noise due to temperature
fluctuations in heat conduction in resistors, diodes, and bipolar transistors. The
goal of this research is to generate accurate models to explain physical origin of 1/f
noise in...
In the first part of this dissertation, low frequency l/f or flicker noise in the frequency range of Hz to kHz has been identified and demonstrated to be described by temperature fluctuations in heat conduction in bipolar transistors operated at higher power densities. This noise phenomenon is not described by...
A comparison and analysis of jitter for five different architectures of ring oscillators using a novel simulation technique developed by Professor Forbes' group is presented. Ring oscillators have become an essential building block in many digital and synchronous communications system due to their integrated nature and are widely used in...
In Radio Frequency Integrated Circuits (RFIC) or high frequency digital
ICs, there is a demand to probe the internal nodes for testing. The ultra low
capacitance RFIC probe presented in his work is a flexible tool for these
applications. The probe utilizes the coupling between a tungsten needle and the...
Solar photovoltaic is considered one among many new alternatives to satisfy
our demand for energy. Solar Cells have undergone changes in the last 50 years or so
since its invention in 1954. Solar power is beginning to challenge conventional
energy sources in terms of mainstream acceptance. Solar power along with...
The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each...
This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
Previous studies on low frequency flicker noise in bipolar junction transistors (BJT) are reviewed. The original BJT flicker noise sources are mainly attributed to the fluctuation in base surface recombination and the fluctuation in the mobility or diffusivity of free charge carriers. Our experiments were done to verify a newly...