The operation of a tunnel-diode delay-line memory cell is
examined in some detail, and a digital computer program which
approximately simulates the operation of this memory cell is developed.
The data from the computer simulation is compared with the
available experimental data and found to agree very closely for clock...
As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored....
Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Wideband tunnel-diode amplifiers using common-base
transistor stages for isolation were investigated for
stability criteria, frequency response, and the effects
of temperature and voltage supply fluctuations. For the
first time the full frequency spectrum of a tunnel-diode,
from d-c to the gigahertz (GHz) range, was able to be
utilized in an...