Patterning of metal oxides typically involves a multi step process, involving
depositing a resist, patterning that resist with some form of lithography, etching the
oxide through the resist, and finally removing. This process can be simplified if the
resist is removed and replaced with a metal oxide that can be...
Since bulk p-CuO/n-ZnO heterocontacts were first proposed for gas detection, rapid development has taken place in improving the overall functionality of these structures. While bulk heterocontacts have been shown to exhibit desirable sensitivity and selectivity characteristics, these devices suffer from innate diffusion and ZnO/CuO connectivity drawbacks that limit their effective...
The variegated aqueous chemistries of metal cations are applied to the design and synthesis of non-toxic solution precursors suitable for additive printing of large-area oxide electronics. Polycondensation behaviors of aqueous Al+3 and PO4 +3 are manipulated in the deposition of atomically smooth amorphous aluminum oxide phosphate (AlPO) dielectric films. AlPO...
The preparation and characterization of thin film oxides and chalcogenides by pulsed laser deposition (PLD) is presented. An overview of fundamental PLD concepts are presented and are followed by a description implementation and development of the PLD systems at OSU. We present the results of thin film growth of high...
Thin films of the p-type semiconductor, barium copper sulfide fluoride (BaCuSF) were deposited using pulsed laser deposition. Similar p-type conductivity in Cu2O is caused by copper vacancies. Addition of copper dopant is proposed as a method for filling the copper vacancies in BaCuSF. The films are characterized to determine quality...
We report measurements of the structural, optical, transport, and magnetic properties of single crystals of the
anisotropic p-type transparent semiconductor CuAlO₂. The indirect and direct band gaps are 2.97 and 3.47 eV,
respectively. Temperature-dependent Hall measurements yield a positive Hall coefficient in the measured range
and an activated carrier temperature...
This dissertation outlines two approaches for improving the efficiency and reducing the cost of photovoltaic energy generation. First, the structures of known binary copper and iron compounds are used to choose the promising compositions Fe₂XS₄ (X = Si, Ge), Cu₃TaQ₄ (Q = Se, Te), and BaCuQ'F (Q' = S, Se,...
Double excitonic absorption peaks are observed in textured BaCuSF and BaCuSeF thin films. The excitonic doublet separation increases with increasing fraction of heavy chalcogen in the thin-film solid solutions, in good agreement with the spin-orbit splitting of the valence bands calculated by density-functional theory. In BaCuSF and BaCuSeF, the excitons...
In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the...
BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 – 3.5 eV) and a high concentration of free holes (10¹⁸ – 10²⁰ cm⁻³) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level...