Busca

Remover filtros
Filtragem por: Alternative title ssim Surface Origin of High Conductivities in Undoped In[subscript2]O[subscript3] Thin Films Remover Alternative title ssim: Surface Origin of High Conductivities in Undoped In[subscript2]O[subscript3] Thin Films

Resultados da Busca

  • Surface Origin of High Conductivities in Undoped In2O3 Thin Films

    O Criador:
    Lany, S., Zakutayev, A., Mason, T. O., Wager, J. F., Poeppelmeier, K. R., Perkins, J. D., Berry, J. J., Ginley, D. S., and Zunger, A.
    Abstract:
    The microscopic cause of conductivity in transparent conducting oxides like ZnO, In₂O₃, and SnO₂ is generally considered to be a point defect mechanism in the bulk, involving intrinsic lattice defects, extrinsic dopants, or unintentional impurities like hydrogen. We confirm here that the defect theory for O-vacancies can quantitatively account for...
    Resource Type:
    Article
    Full Text:
    untitled Surface Origin of High Conductivities in Undoped In2O3

  • Room Temperature Seebeck Measurements on CuSc1-xMgxO2+y Transparent Conductive Thin Films

    O Criador:
    Easley, Dara L.
    Abstract:
    A series of seven magnesium-doped copper scandium oxide films were made by radio frequency sputtering, and intercalated at various oxygen pressures to create different oxygen concentrations in each film. The objectives of this study were to verify the p-type nature of these transparent conductive thin films, to determine the correlation...
    Resource Type:
    Honors College Thesis
    Full Text:
    Conductive Thin Films. Abstract approved: Janet Tate A series of seven magnesium-doped copper scandium

  • New luminescent materials and high-performance solution-processed oxide thin films

    O Criador:
    Jiang, Kai
    Abstract:
    Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
    Resource Type:
    Dissertation
    Full Text:
    morphology, high luminescence efficacy, and stability against moisture, were synthesized. Thin films of

  • Growth and characterization of the p-type semiconductors SnS and BiCuOSe

    O Criador:
    Francis, Jason
    Abstract:
    BiCuOSe and SnS are layered, moderate band gap (ε[subscript G] ≈ 1 eV) semiconductors that exhibit intrinsic p type conductivity. Doping of BiCuOSe with Ca results in a slight expansion of the lattice and an increase of the hole concentration from 10¹⁸ cm⁻³ to greater than 10²⁰ cm⁻³. The large...
    Resource Type:
    Dissertation
    Full Text:
    of BiCuOSe:Ca Thin Films likely explains the fairly high carrier densities observed in nominally

  • The chemistry and device applications of amorphous thin-film interfaces

    O Criador:
    Knutson, Christopher C.
    Abstract:
    Solid-state amorphous materials show amazing promise in thin-film electronics. The interface-to-bulk ratio of thin films makes interfacial chemistries of these systems of utmost importance. Thin films of amorphous metals, dielectrics and semiconductors have novel chemistries that are not only based upon their elemental constituent makeup, but also based upon the...
    Resource Type:
    Dissertation
    Full Text:
    solutions to aid in the production of thin-film devices is warranted, and I look forward to the future of

  • Growth and characterization of zinc ferrite thin films for high frequency applications

    O Criador:
    Hu, Jiqing
    Abstract:
    Ferrites have been used for various high frequency applications as bulk materials. These applications, however, are limited to large dimension devices. In this thesis, thin film ferrites were deposited from a low temperature solution-based deposition process that is suitable for micro-scale high frequency applications. The low temperature nature of this...
    Resource Type:
    Dissertation
    Full Text:
    Growth and Characterization of Zinc Ferrite Thin Films for High Frequency

  • Thermal conductivity measurements of amorphous thin films on silicon via the 3ω method

    O Criador:
    Wiedle, River Alan
    Abstract:
    Thermal transport properties of a material are often difficult to measure, especially for thin films, but they are important for materials that have applications in modern devices, such as nano-scale electronics, thermoelectrics, and thermally resistive coatings. In this thesis, we describe an apparatus developed to measure the thermal conductivity of...
    Resource Type:
    Honors College Thesis
    Full Text:
    conductivity measurements of amorphous thin films on silicon via the 3ω method Abstract approved: Janet Tate

  • Analysis of the processing and characterization of p-type CuScO₂ thin films

    O Criador:
    Nielsen, Benjamin C.
    Abstract:
    Two different doping techniques, oxygen intercalation and Mg cation substitution, were investigated in thin film p-type CuScO₂, a wide band gap semiconductor with the delafossite structure. Films rf-sputtered onto amorphous SiO₂ substrates were polycrystalline after post-deposition annealing. X-ray diffraction was used to determine that the films are predominantly polycrystalline 3R...
    Resource Type:
    Masters Thesis
    Full Text:
    Pauw setups used to measure conductivity of films. The distance between probes is 2 mm in (A), and

  • Comprehensive depletion-mode modeling of oxide thin-film transistors

    O Criador:
    Zhou, Fan
    Abstract:
    The primary focus of this thesis is modifying the comprehensive depletion-mode model and extending its applicability to p-channel thin-film transistor (TFT) behavior and subthreshold (subpinchoff) operation. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from square-law theory, which can...
    Resource Type:
    Masters Thesis
    Full Text:
    . K. Weimer for the early 1960s [13]. In Weimer’s work, a thin film of polycrystalline cadmium

  • Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

    O Criador:
    Yokoyama, Tomoe
    Abstract:
    The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply,...
    Resource Type:
    Masters Thesis
    Full Text:
    -on teaching of thin-film characterization techniques that I employed in this thesis work. Support