Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel
MOSFETs under static (DC) stress are studied in order to establish the degradation
mechanisms of such devices. Degradation is monitored as a function of time at various
gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate
voltage...
The refresh times of all dynamic charge storage devices, best
characterized by the generation lifetime at roan temperature and the
recombination lifetime at higher device operating temperatures
(T>70°C), strongly influence the efficient and successful operation
of dynamic charge storage devices such as DRAM's and CCD's. Both
recombination and generation lifetime...