The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
In an enhancement-mode, n-channel (p-channel) oxide thin-film transistor (TFT), current arises as a consequence of electron (hole)
transport within a narrow accumulation layer. The square-law model accurately describes enhancement-mode TFT behavior and
establishes the equations appropriate for carrier mobility extraction. In contrast, in a depletion-mode oxide TFT, carrier transport
can...