This thesis reports on an investigation of the growth, by
Molecular Beam Epitaxy, of III,III-V ternary compound semiconductors.
Strained and unstrained growth was studied via the deposition of InGaAs
on GaAs and InP substrates. Lattice matched InGaAs on InP was grown,
and an in situ method was developed to find...
GaAs MESFETs are widely used in high speed integrated circuits (ICs) and
microwave circuits. Due to the materials and processing methods used in GaAs
MESFET fabrication, deep level traps in the substrate materials have a strong influence
on device performance.
In this work we used the drain current transient characterization...
This thesis reports on the crystal growth, fabrication,
modeling and performance of Graded Index-Separate Confinement
Heterostructure laser diodes which contain pseudomorphic InGaAs as the
active region material. Laser epitaxial layers were grown with
different indium mole-fractions, and a constant InGaAs layer thickness
of 10 nm, on both sides of the...
This thesis reports on the growth and characterization of p-type
pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor
(MODFET) structures. A series of different p-type MODFET structures were grown
with a systematic variation of the indium mole fraction and quantum well width of
the InGaAs channel region. Extensive characterization...
This study looks at whether two physical characteristics, physical attractiveness and perceived competence, have an impact on student analysts finding large discrepancies between current price and target price. Equity reports published online by undergraduate and MBA students involved in student investment clubs and portfolio management classes are combined with pictures...