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Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates

Creator:: Valdivia, Arturo Herrera
Abstract:: Two-dimensional transition metal dichalcogenides (TMDs) have recently come under intense investigation as building blocks for van der Waals heterostructure electronics. One of the most promising TMDs is MoS₂, which transitions from an indirect bandgap (1.3 eV) in its bulk state to a direct band gap (1.8 eV) in its single...
Resource Type:: Masters Thesis
Full Text:: : Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates. Abstract approved

Atomic layer deposition of two dimensional MoS₂ on 150 mm substrates

Creator:: Valdivia, Arturo, Tweet, Douglas J., and Conley, John F. Jr
Abstract:: Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS₂ uniformly across 150mm diameter SiO₂/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl5 and H₂S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E¹₂g) and out-of-plane...
Resource Type:: Article
Full Text:: 150 mm substrates Atomic layer deposition of two dimensional MoS2 on 150 mm substrates Arturo

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Creator:: Amani, Matin, Chin, Matthew L., Birdwell, A. Glen, O'Regan, Terrance P., Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., Lou, Jun, and Dubey, Madan
Abstract:: Molybdenum disulfide (MoS₂) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using...
Resource Type:: Article
Full Text:: properties based upon both layer count and the choice of substrate/top gate materials.1–4 In particular

Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

Creator:: Klarr, Tyler D.
Abstract:: As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
Resource Type:: Masters Thesis
Full Text:: insulators deposited via atomic layer deposition (ALD) enables reproducible fabrication of MIM diodes with

Atomic layer deposition of nanolaminate Al₂O₃-Ta₂O₅ and ZnO-SnO₂ films

Creator:: Smith, Sean Weston
Abstract:: Thin films are an enabling technology for a wide range of applications, from microprocessors to diffusion barriers. Nanolaminate thin films combine two (or more) materials in a layered structure to achieve performance that neither film could provide on its own. Atomic layer deposition (ALD) is a chemical vapor deposition technique...
Resource Type:: Masters Thesis
Full Text:: substrate, a thick (~100 nm) layer of wet thermal oxide was grown on the p-type Si substrates prior to ZnO

Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

Creator:: Austin, Dustin Z.
Abstract:: Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have become a core passive component in modern integrated circuits. International Technology Roadmap for Semiconductors (ITRS) projections for scaling of analog/mixed-signal MIMCAP applications require simultaneously increasing capacitance density while maintaining low leakage current density and low voltage nonlinearity (characterized by the quadratic...
Resource Type:: Dissertation
Full Text:: Engineering presented on May 19, 2017. Title: Atomic Layer Deposition of Multi-Insulator Metal-Insulator

Development and Applications of Oxide Thin Films using Atomic Layer Deposition and Prompt Inorganic Condensation

Creator:: Smith, Sean Weston
Abstract:: In the first part of this work, thin films of Al₂O₃ deposited via atomic layer deposition (ALD) are demonstrated to improve the thermal stability of cellulose nanocrystal (CNC) aerogels. ALD is a chemical vapor deposition (CVD) like method in which sequential precursor exposures and self-limited surface reactions produce a conformal...
Resource Type:: Dissertation
Full Text:: , 2015. Title: Development and Applications of Oxide Thin Films using Atomic Layer Deposition and

Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O

Creator:: Austin, Dustin Z., Allman, Derryl, Price, David, Hose, Sallie, Saly, Mark, and Conley, John F., Jr.
Abstract:: Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films deposited...
Resource Type:: Article
Full Text:: Atomic layer deposition of bismuth oxide using Bi(OCMe

Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

Creator:: Triska, Joshua B.
Abstract:: Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is...
Resource Type:: Masters Thesis
Full Text:: Computer Engineering presented on May 23, 2011. Title: Atomic Layer Deposition of Nanolaminate High

Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels

Creator:: Smith, Sean W., Buesch, Christian, Matthews, David J., Simonsen, John, and Conley, John F., Jr.
Abstract:: Cellulose nanocrystal (CNC) aerogels are coated with thin conformal layers of Al₂O₃ using atomic layer deposition to form hybrid organic/inorganic nanocomposites. Electron probe microanalysis and scanning electron microscopy analysis indicated the Al₂O₃ penetrated more than 1500 μm into the aerogel for extended precursor pulse and exposure/purge times. The measured profile...
Resource Type:: Article
Full Text:: resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels

ScholarsArchive@OSU

Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates

Atomic layer deposition of two dimensional MoS₂ on 150 mm substrates

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO₂, Al₂O₃, HfO₂, and ZrO₂ using Internal Photoemission Spectroscopy

Atomic layer deposition of nanolaminate Al₂O₃-Ta₂O₅ and ZnO-SnO₂ films

Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

Development and Applications of Oxide Thin Films using Atomic Layer Deposition and Prompt Inorganic Condensation

Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O

Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels

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