Index Catalog // ScholarsArchive@OSU

Creator:: Divekar, Prasad K.
Abstract:: A primarily software based Fourier Deep Level Transient Spectroscope (FDLTS) is built. The raw capacitance transient is acquired and digitized using capacitance meter HP4280A whereas the signal analysis is done using a customized software module. The software module calculates both the conventional DLTS spectrum and the Fourier DLTS spectrum. This...
Resource Type:: Masters Thesis
Full Text:: explain the measurement method further, we will consider a Schottky diode on an n-type semiconductor. The

Creator:: Ebner, John
Abstract:: This thesis reports on the crystal growth, fabrication, modeling and performance of Graded Index-Separate Confinement Heterostructure laser diodes which contain pseudomorphic InGaAs as the active region material. Laser epitaxial layers were grown with different indium mole-fractions, and a constant InGaAs layer thickness of 10 nm, on both sides of the...
Resource Type:: Dissertation
Full Text:: laser diode epitaxial structures of arbitrary design, including the band perturbations due to the

Creator:: Klarr, Tyler D.
Abstract:: As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
Resource Type:: Masters Thesis
Full Text:: / silicon oxide (Si / SiO2) semiconductor-insulator barrier, which has been extensively used in the

Creator:: Li, ChyiShiun
Abstract:: The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
Resource Type:: Masters Thesis
Full Text:: : Radiation Effects in 111-V Compound Semiconductor Heterostructure Devices. Abstract approved: S

Creator:: Cowell, E. William, III
Abstract:: The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored....
Resource Type:: Dissertation
Full Text:: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 5.1 Potential barrier evaluation via MIM diode I-V characteristics . . . . . . . . . . . 97 5.2

Creator:: Wang, Jyi-Ren
Resource Type:: Masters Thesis
Full Text:: completed, the results were presented for convenient evaluation. The postprocessing capabilities of the

Creator:: Lin, Shijia
Abstract:: Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
Resource Type:: Masters Thesis
Full Text:: electron transistors as well as optical rectennas for energy harvesting. The performance of the MIM diode

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