Index Catalog // ScholarsArchive@OSU

NMR investigation of cadmium telluride single crystals doped with group III elements

Creator:: Goebel, Andreas
Resource Type:: Masters Thesis
Full Text:: Telluride Single Crystals Doped with Group III Elements Abstract approved. William W. Warren Pulsed

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: - doped A10.3Ga0.7As. The first experimental investigation involves the minority carrier capture (MCC

NMR study of heavily doped Si:B

Creator:: Fuller, Scott E.
Resource Type:: Dissertation
Full Text:: Doctor of Philosophy in Physics presented on September 29, 1994. Title: NMR Study of Heavily Doped Si:B

Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors

Creator:: Kykyneshi, Robert
Abstract:: Bulk properties of CuSc₁₋ₓMgₓO₂, CuSc₁₋ₓMgₓO₂₊y, BaCu₂S₂, Bai₁₋ₓKCu₂S₂, BaCu₂Se₂ and Bai₁₋ₓKₓCu₂Se₂ are investigated supporting the search for highly conductive p-type thin films. Mg is an efficient dopant in CuScO₂ with conductivity up to l.5.10⁻² S/cm. Oxidation of CuScO₂:Mg leads to further increase in conductivity up to 0.5 S/cm. The amount of...
Resource Type:: Masters Thesis
Full Text:: doped sample. Mg doping above 6 at. % leads to saturated or slightly decreased conductivities in CuScO2

Synthesis and study of transparent p- and n-type semiconductors and luminescent materials

Creator:: Park, Cheol-Hee
Abstract:: New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The...
Resource Type:: Dissertation
Full Text:: -type transparent conducting films of W-doped In2O3 and W-doped zinc indium oxide (ZIO) have been

NMR studies of CdF₂:Ga and CdF₂:Ga,Y

Creator:: Hilger, Derrick J.
Abstract:: Crystals of CdF₂:In and CdF₂:Ga reduced in a cadmium vapor exhibit unusual metastable properties that can be explained by a "negative U" model. This work uses NMR to investigate this model for CdF₂:Ga and CdF₂:Ga,Y and compare the results to optical measurements. Temperature dependent relaxation measurements were done on ¹¹³Cd...
Resource Type:: Dissertation
Full Text:: semiconducting cadmium fluoride, CdF2in crystal form. We have looked at crystals which have been doped with

The synthesis, optical, and transport properties of SnZrS₃

Creator:: Harada, Daniel Ryan
Abstract:: Semiconducting materials which can be ambipolarly doped are highly desirable in many electronics applications, including use as solar cell materials. SnZrS₃ is being investigated for the possibility of ambipolar doping, with potential applications as a solar cell absorber layer. This dissertation covers the synthesis of SnZrS₃ and the related compound...
Resource Type:: Masters Thesis
Full Text:: which can be ambipolarly doped are highly desirable in many electronics applications, including use as

HEMT-compatible laser diodes

Creator:: Eliason, Garth W.
Resource Type:: Masters Thesis
Full Text:: basis from which a semiconductor laser can be obtained. It has been demonstrated that Si-doped GaAs

Modeling and characterization of hemt devices

Creator:: Chang, Chujyh
Abstract:: Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...
Resource Type:: Masters Thesis
Full Text:: to thank Bruce Odekirk at Triquint Semiconductor, Beaverton OR, for providing the samples for my

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

Creator:: Schulte, Donald W.
Abstract:: This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
Resource Type:: Masters Thesis
Full Text:: reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped

ScholarsArchive@OSU

NMR investigation of cadmium telluride single crystals doped with group III elements

Electrical characterization of n-type aluminum gallium arsenide

NMR study of heavily doped Si:B

Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors

Synthesis and study of transparent p- and n-type semiconductors and luminescent materials

NMR studies of CdF₂:Ga and CdF₂:Ga,Y

The synthesis, optical, and transport properties of SnZrS₃

HEMT-compatible laser diodes

Modeling and characterization of hemt devices

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

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