In this paper, an analysis of the clock-feedthrough effects in
switched-current (SI)' circuits will be presented. The clock-feedthrough
effects caused by the non-ideal characteristic of MOS
switches when they are turned off limit the accuracy of the analog
track-and-hold (T/H) circuits. A model to analyze and characterize this
effect is...
It has become customary in electrical engineering to think of
signal processing in terms of voltage variables to the exclusion of
current variables. This tendency has resulted in voltage signal
processing circuits such as voltage-controlled voltage sources
(VCVS) and voltage-mode operational amplifiers. However, the VCVS
operational amplifier has several limitations...
Clock-feedthrough effects, channel-length modulation and device mismatch are
the main causes of the inaccuracy of Switched-Current (SI) circuits. In this paper, these
non-ideal effects are analyzed. A high-performance current mirror, namely regulated
cascode current mirror, which eliminates drain voltage variation problem is introduced.
By using this current mirror as a...
A MOS biquadratic (biquad) filter employing the switched-current technique is
reported. The circuit uses current-mode processing which can offer wide
bandwidth, low voltage operation, and can be implemented with standard CMOS
technology. Examples of lowpass, highpass, and bandpass filters are given
which illustrate the synthesis procedures and the versatility of...
The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
In this dissertation, two important current mode circuit design subjects have
been explored. In the first part, the switched-current circuit technique has been
investigated. The fundamental performance and limitations of this technique are
explored. One of the major limitations, the signal distortion caused by clock
feedthrough has been substantially reduced...
Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel
MOSFETs under static (DC) stress are studied in order to establish the degradation
mechanisms of such devices. Degradation is monitored as a function of time at various
gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate
voltage...
In this report, the optical characteristics of ZnS:Tb AC driven thin-film
electroluminescent devices are evaluated. Luminescence at low and room temperature
under a constant phosphor field is recorded in order to probe the hot electron energy
distribution. Samples fabricated by atomic layer epitaxy and by sputter deposition are
investigated and...