In this report, the optical characteristics of ZnS:Tb AC driven thin-film
electroluminescent devices are evaluated. Luminescence at low and room temperature
under a constant phosphor field is recorded in order to probe the hot electron energy
distribution. Samples fabricated by atomic layer epitaxy and by sputter deposition are
The purpose of this work is to develop a new model for LDD
n-MOSFET degradation in drain current under long-term AC use
conditions for lifetime projection which includes a self-limiting
effect in the hot-electron induced device degradation.
Experimental results on LDD n-channel MOSFETs shows that the
maximum drain current degradation...
Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel
MOSFETs under static (DC) stress are studied in order to establish the degradation
mechanisms of such devices. Degradation is monitored as a function of time at various
gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate
Reliability of sub-micron analog circuits is directly related to impact ionization and
the subsequent changes in threshold voltage and drain current of n-MOSFET devices.
This thesis presents theory of the hot-electron effects on the device characteristics and
circuit performance, explores several approaches to improve performance at both the