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  • Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors

    Creator:
    Motley, Joshua R.
    Abstract:
    Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented. The back channel of IGZO thin film transistors can be modified by the absorption of self-assembled monolayers. The electrical properties of the IGZO exposed back...
    Resource Type:
    Masters Thesis
    Full Text:
    Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    radio-frequency (RF) sputtered amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    : _____________________________________________________ John F. Wager Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under