Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on
heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing
the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission
spectroscopy has been used to determine the band offsets in...
The diffusion behavior of arsenic (As) and gallium (Ga) atoms from semi-insulating GaAs (SI-GaAs) into ZnO films upon post-growth annealing vis-`a-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy. The films, annealed at 600 °C and 700 °C showed...
Flexible electronics processing techniques were applied to integrate a glucose sensor with a hormone-delivery catheter in order to create a cheap and minimally invasive method for patients with type 1 diabetes to continually monitor and control their blood sugar levels. Ultimately, this work intends to move toward the development of...
The development of solution-based methods for deposition of different thin film material is presented as an alternative to high cost vacuum-based methods. For certain materials, vacuum techniques are unsuitable for processing. Additionally, vacuum-based processes present high capital costs associated with equipment, and slow processing times. Atmospheric pressure solution based techniques...