The perturbation method is applied to solve two numerical
problems in the earth sciences, viz., (l)the computation of deep sea
currents in the coastal region of the northeast Pacific and (2) the
interpretation of D.C. conduction data in exploration geophysics.
The perturbation method is largely equivalent to the method of...
Magnetic, gravity and bathymetry data were collected on an extended
cruise of the R/V Yaquina in 1969. The last set of data was obtained
from those track lines leaving the Panama Basin. The area
covered is mainly the Cocos plate (Molnar and Sykes, 1969). The data
is analyzed and compared...
Delta-sigma data converters have gained popularity in both analog-to-digital and digital-to-analog converters (ADCs and DACs) due to their simplicity, high linearity and immunity to many analog circuit imperfections. These data converters include features such as oversampling, noise-shaping, and (historically) single-bit quantization. Single-bit converters are preferred for their inherent linearity. This...
Response behavior of a nonlinear structural system subject to environmental loadings
is investigated in this study. The system contains a nonlinear restoring force due to large
geometric displacement. The external excitation is modeled as a narrowband stochastic
process possessing dynamic characteristics of typical environmental loadings.
A semi-analytical method is developed...
The objective of this thesis is to design a high speed digital FIR filter. The inputs of the
system come from a Delta-Sigma modulator. This FIR filter takes 1024 inputs,
multiplies them with their coefficients and adds the results. The main design task is to
take the input data, which...
Synchronization is one of the important issues in digital system design. While
other approaches have been intriguing, up until now a globally clocked timing
discipline has been the dominant design philosophy. However, we have reached the
point, with advances in technology, where other options should be given serious
consideration. VLSI...
The use of double-diffused n-type MOS transistor
(DN-MOS) in a complementary MOS random-access-memory (CMOS
RAM) cell is the main objective of this investigation.
DN-MOS transistors and conventional p-channel MOS
transistors on the same chip have been successfully fabricated.
Process sequence effects on device threshold voltage
and channel length are discussed....