Full integration of CMOS low noise amplifiers (LNA) presents a challenge for low
cost CMOS receiver systems. A critical problem faced in the design of an RF CMOS LNA
is the inaccurate high-frequency noise model of the MOSFET implemented in circuit
simulators such as SPICE. Silicon-based monolithic inductors are another...
The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
The dependence of the substrate resistance, R[subscript sub], for MOS transistor RF
modeling on transistor biasing and layout is studied from device simulations and
measurements. Though R[subscript sub] is found to be bias dependent, the error incurred by
assuming a constant value equal to the DC resistance is not significant....
The long-term goal of this research project is the development of solution-based
inorganic dielectric and semiconductor materials for inkjet printed electronics.
The main focus of this thesis involves testing of the materials and devices
A new solution-based inorganic dielectric material (HfOSO₄), given the
name hafsox, is developed and...
GaAs MESFETs are widely used in high speed integrated circuits (ICs) and
microwave circuits. Due to the materials and processing methods used in GaAs
MESFET fabrication, deep level traps in the substrate materials have a strong influence
on device performance.
In this work we used the drain current transient characterization...
The characteristic of the subthreshold current in a
GaAs MESFET exhibits a negative exponential function with
Vgs. After studying the behavior of this current in this
region over a range of temperature and drain bias voltages,
a subthreshold current model was developed. The model was
implemented in a circuit simulation...