Low temperature noise measurements on junction field-effect
transistors tend to substantiate a theory of low frequency field-effect
transistor noise based on the presence of generation centers in the
gate-channel depletion region. Measurements of device noise voltage
versus temperature reveal pronounced maxima and minima over the
temperature range of 300° K...
This thesis deals with the output statistics of nonlinear devices.
It develops the classical output autocorrelation function in two dimensions
and extends the theory to three and four dimensions. Closed
form solutions for the output correlation function in two and three
dimensions are given for the full- and half-wave rectifier...
The problems involved in measuring noise on video signals are
described. A brief review of several methods that have been used for
video signal noise measurement is followed by a detailed explanation
of the comparison technique. This technique is based on the principle
that noise sources with different spectral content,...
Published May 1972. Facts and recommendations in this publication may no longer be valid. Please look for up-to-date information in the OSU Extension Catalog: http://extension.oregonstate.edu/catalog
Supply noise is one of the major considerations in almost all analog building blocks. In the past, adequate supply rejection is usually achieved with circuit isolation or excess capacitive coupling. However, this brute force method requires large silicon area and degrades feedback bandwidth. In this study, a method of enhancing...
At frequencies exceeding 1-2 GHz, the reactive nature of a silicon substrate
must be accounted in the substrate network models used in substrate coupling
simulation. High-frequency substrate models, containing reactive components,
must be validated through high-frequency network analyzer measurements.
Prior fabricated test fixtures have been modified to enable high-frequency
(up...
The substrate noise injected by a stepped buffer circuit into two single-ended 1.5GHz low noise amplifiers is examined for a heavily doped 0.25µm CMOS process. The difference in the LNA noise rejection is characterized as a function of the size and placement of substrate contacts. The use of a resistive...
Recent developments in digital communications at microwave frequencies have revealed that local oscillator phase noise is often a factor in the bit error rate (BER) analysis. Digital signals transported across microwave radio links acquire waveform jitter from local oscillator phase noise. As jitter increases so does BER.
The main goals...
In the first part of this dissertation, low frequency l/f or flicker noise in the frequency range of Hz to kHz has been identified and demonstrated to be described by temperature fluctuations in heat conduction in bipolar transistors operated at higher power densities. This noise phenomenon is not described by...
Low-dimensional electronic materials offer a platform to observe biological processes with unprecedented spatial and temporal resolution. Carbon nanotubes (CNTs) are the closest physical analog to an ideal 1D system and can be scaled and integrated into multiplexed electronic circuitry. The molecular structure of a CNT is also biocompatible, making them...