Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal
displays. Currently, amorphous silicon is the dominant TFT technology for displays, but
higher performance TFTs will become necessary to enable ultra-definition resolution
high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were
fabricated by RF magnetron sputter...
The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >10(4) and long retention times of >10(4)...
The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFTs) has been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of...
The various solution-based processes, spin coating, inkjet printing, microreactor assisted nanoparticle deposition (MANDTM) and spin-successive ionic layer absorption and reaction (Spin-SILAR) were used to demonstrate thin film electronics and anti-reflective coatings. Several aspects of thin film transistors (TFTs) were tested including a range of temperatures, annealing atmosphere, and deposition methods....