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  • Substrate noise coupling analysis in 0.18um silicon germanium (SiGe) and silicon on insulator (SOI) processes

    Creator:
    Pham, Hui En
    Abstract:
    Analysis of substrate noise coupling has been performed for a 0.18¹m lightly doped silicon germanium BiCMOS process. Techniques to minimize noise coupling in the chip and board design are presented, as well as methods for accurate modeling for substrate noise coupling simulations. Measurements from a test chip were taken to...
    Resource Type:
    Masters Thesis
    Full Text:
    Coupling Analysis in 0.18µm Silicon Germanium (SiGe) and Silicon on Insulator (SOI) Processes Abstract

  • UWB Low Power RF System for Localization

    Creator:
    Sheokand, Anoop
    Abstract:
    Real time indoor positioning awareness systems aim to add localization capabilities to upcoming wireless technologies that are quickly becoming an important feature for indoor environment. RF-based impulse-radio ultra-wideband (IR-UWB) is a promising technology for in-door positioning systems due to obstacle penetration capabilities, immunity to multi-path and fading, and high resolution....
    Resource Type:
    Masters Thesis
    Full Text:
    technology. It was based on the recommenda- tion submitted by ECC of the European Conference of Postal and

  • Terahertz Induced Non-linear Electron Dynamics in Nanoantenna Coated Semiconductors at the Sub-picosecond Timescale

    Creator:
    Stickel, Andrew
    Abstract:
    This dissertation is an exploration of the material response to Terahertz (THz) radiation. Specifically we will explore the ultrafast electron dynamics in the nonperturbative regime in semiconductors that have been patterned with nanoantenna arrays using broadband, high intensity, THz radiation. Three main semiconductor materials will be studied in this work....
    Resource Type:
    Dissertation
    Full Text:
    the degree of Doctor of Philosophy in Physics presented on August 10, 2016. Title: Terahertz Induced

  • Reactively sputtered films of silicon nitride for diffusion masking

    Creator:
    Delzer, Dennis Richard
    Abstract:
    The experimental procedure for reactively sputtering films of silicon nitride together with the methods for measuring the film thickness have been investigated. Some of the properties of these nitride films were studied. These properties included: infrared spectrum, etching properties, and index of refraction. The adherence of the films was also...
    Resource Type:
    Masters Thesis
    Full Text:
    of Silicon Nitride.... 32 A. Effect of Cathode -Substrate Distance on Film Thickness 32 B

  • Two-dimensional temperature model for target materials bombarded by ion beams

    Creator:
    Bostick, Kent C.
    Abstract:
    The ion implantation process is a very precise, controllable, and reproducible method used to enhance material properties of finished components such as ball bearings. Essentially, the target material is bombarded by accelerated ions to form a thin alloyed layer in the substrate. As the ions deposit their kinetic energy in...
    Resource Type:
    Masters Thesis
    Full Text:
    , S.N., "U.S. Navy Manufacturing Technology Program on Ion Implantation", Materials Science and