Spectroscopic ellipsometry (SE) is used to characterize amorphous and crystalline thin films of TiO2. Amorphous precursor films of TiO2 are deposited by radio frequency magnetron sputtering on fused silica and silicon substrates. Annealing the amorphous precursor films induces them to crystallize into either pure or mixed phases of the three...
Semiconducting materials are of immense importance due to their presence in almost all modern devices. It is possible that the surface physics of semiconductors could be used to control the nanoscale topography and properties of these materials, ultimately creating new options for device fabrication. This could result in profound implications...
The purpose of this project is to verify scattering mechanisms in semiconductors by measuring transport properties and producing data that reflects existing research. The Hall effect is utilized to measure the resistivity, mobility and charge carrier concentration of the semiconductors: indium tin oxide (ITO), p-type silicon, and n-type silicon. By...
BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 – 3.5 eV) and a high concentration of free holes (10¹⁸ – 10²⁰ cm⁻³) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level...
The goal of this research is to determine whether x-ray diffraction (XRD) is a viable method for resolving ZnS thin films on Si substrates. The samples are ZnS thin films of thickness between 50nm and 100nm, on Si substrates that are 0.5mm thick.
ZnS and Si have nearly identical lattice...
Zinc sulfide thin films on silicon wafers were analyzed for layer thickness, refractive index, and absorption using reflection spectroscopy (RS), spectroscopic ellipsometry (SE), and modeling programs. RS and refractive index values from literature were used to model film thickness based on reflection and the SCOUT modeling program was used to...
Impedance spectroscopy is a method of modeling materials with equivalent circuits to determine electrical properties, such as the resistivity and the dielectric constant. We explore impedance spectroscopy, both theoretically and experimentally through applying the method to samples of BaCuS1-xSexF. Grain boundary effects were dominant in the results, and although they...
Hall measurements can be made on the unstudied alloy, Sn₁-ₓCaₓSe to determine its electrical transport properties. The Sn₁-ₓCaₓSe samples were made by laser deposition into thin films and have a variable of calcium concentration x. These samples are approximately 250 nm in thickness, were grown at 366° C and are...
The Van der Pauw method for transport measurements of conductivity and carrier concentration were tested on indium-tin-oxide (ITO) films and silicon wafers, and then implemented on Cu10xAgxZn2Sb4S13 thin films. ITO was used as a test case for high temperature transport measurements because it a well characterized semi-metal. The mobility of...
The electrical properties of amorphous and crystalline titanium dioxide polymorphs are reported. Titanium dioxide is a widely used transparent semiconductor and it is a useful oxide model. Using variable temperature transport measurements of thin films, it was possible to establish the activation energy barrier for conduction. This was accomplished using...