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Atomic layer deposition of two dimensional MoS₂ on 150 mm substrates

Creator:

Valdivia, Arturo, Tweet, Douglas J., and Conley, John F. Jr

Abstract:

Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS₂ uniformly across 150mm diameter SiO₂/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl5 and H₂S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E¹₂g) and out-of-plane...

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Article

Full Text:

2016 American Vacuum Society. [http://dx.doi.org/10.1116/1.4941245] I. INTRODUCTION The lack of a